Zobrazeno 1 - 10
of 137
pro vyhledávání: '"Joe Margetis"'
Autor:
Bongkwon Son, Yiding Lin, Kwang Hong Lee, Joe Margetis, David Kohen, John Tolle, Chuan Seng Tan
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 3, Pp 1-6 (2022)
In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge0.91Sn0.09-on-insulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A/W at wavelengths of 1,600 and 2,003 nm, respectively. Through a systematic study, it
Externí odkaz:
https://doaj.org/article/954ca2da9385415a814b95faee84894f
Autor:
Oluwatobi Olorunsola, Hryhorii Stanchu, Solomon Ojo, Krishna Pandey, Abdulla Said, Joe Margetis, John Tolle, Andrian Kuchuk, Yuriy I. Mazur, Gregory Salamo, Shui-Qing Yu
Publikováno v:
Crystals, Vol 11, Iss 8, p 905 (2021)
We report on the connection between strain, composition, defect density and the photoluminescence observed before and after annealing at 300 °C for GeSn samples with Sn content of 8% to 10%. Results show how the composition and level of strain influ
Externí odkaz:
https://doaj.org/article/52cc0d89022f4e5d8b1a6a7e8fdab34a
Autor:
Huong Tran, Callum G. Littlejohns, David J. Thomson, Thach Pham, Amir Ghetmiri, Aboozar Mosleh, Joe Margetis, John Tolle, Goran Z. Mashanovich, Wei Du, Baohua Li, Mansour Mortazavi, Shui-Qing Yu
Publikováno v:
Frontiers in Materials, Vol 6 (2019)
In 2016, Thach et al. reported figures of merit of the GeSn photodiodes with large mesa sizes of 500 and 250 μm to show the potential of the GeSn materials in short-wave infrared photonics23. However, there are only a few discussions about high freq
Externí odkaz:
https://doaj.org/article/7b7ca312be884ddcba3dcdfd43e707ca
Autor:
Wei Du, Quang M. Thai, Jeremie Chrétien, Mathieu Bertrand, Lara Casiez, Yiyin Zhou, Joe Margetis, Nicolas Pauc, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, John Tolle, Baohua Li, Shui-Qing Yu
Publikováno v:
Frontiers in Physics, Vol 7 (2019)
A silicon-based monolithic laser has long been desired. Recent demonstration of lasing from direct bandgap group-IV alloy GeSn has opened up a completely new approach that is different from the traditional III-V integration on Si. In this study, high
Externí odkaz:
https://doaj.org/article/523a72001c304765b62e7efab093c99b
Autor:
Perry C. Grant, Joe Margetis, Yiyin Zhou, Wei Dou, Grey Abernathy, Andrian Kuchuk, Wei Du, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A. Soref, Mansour Mortazavi, Shui-Qing Yu
Publikováno v:
AIP Advances, Vol 8, Iss 2, Pp 025104-025104-7 (2018)
This paper reports the comprehensive characterization of a Ge0.92Sn0.08/Ge0.86Sn0.14/Ge0.92Sn0.08 single quantum well. By using a strain relaxed Ge0.92Sn0.08 buffer, the direct bandgap Ge0.86Sn0.14 QW was achieved, which is unattainable by using only
Externí odkaz:
https://doaj.org/article/bd2b733bd4494d81ab941894828e82d3
Autor:
Joe Margetis, John Tolle
Publikováno v:
ECS Meeting Abstracts. :1191-1191
Increased CMOS logic and memory scaling has forced chip architectures into 3D design spaces such as finFET, GAA, nanosheet, etc. These applications require epitaxial structures to be grown in complicated and restrictive geometries which are composed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e3e4a52dd90679a123f7da9c747564e
https://doi.org/10.1149/ma2022-02321191mtgabs
https://doi.org/10.1149/ma2022-02321191mtgabs
Autor:
Solomon Ojo, Andrian Kuchuk, Hryhorii V. Stanchu, Yuriy I. Mazur, John Tolle, Krishna Pandey, Shui-Qing Yu, Joe Margetis, Gregory J. Salamo, Oluwatobi Olorunsola, Abdulla Said
Publikováno v:
Crystals, Vol 11, Iss 905, p 905 (2021)
Crystals; Volume 11; Issue 8; Pages: 905
Crystals; Volume 11; Issue 8; Pages: 905
We report on the connection between strain, composition, defect density and the photoluminescence observed before and after annealing at 300 °C for GeSn samples with Sn content of 8% to 10%. Results show how the composition and level of strain influ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03cbb9c8f6cd36d48491f377645a47ef
https://www.mdpi.com/2073-4352/11/8/905
https://www.mdpi.com/2073-4352/11/8/905
Autor:
Yong-Hang Zhang, Shui-Qing Yu, Wei Dou, Perry C. Grant, Joe Margetis, Grey Abernathy, Solomon Ojo, John Tolle, Yiyin Zhou, Oluwatobi Olorunsola, Baohua Li, Andrian Kuchuk, Wei Du, Sylvester Amoah
Publikováno v:
Nanotechnology. 33(8)
In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well configuration. The thicker well leads to: (i) lowered ground energy level in Γ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7a67a3230ce3722830d7abe53c83c82
https://pubmed.ncbi.nlm.nih.gov/34763328
https://pubmed.ncbi.nlm.nih.gov/34763328
Autor:
Roger Loo, Joe Margetis, Gianluca Rengo, Rami Khazaka, Alex Demos, Lucas P. B. Lima, John Tolle, Clement Porret, David Kohen
Publikováno v:
ECS Transactions. 93:7-10
Here we evaluate in-situ Ga doping of SiGe as an alternative to ex-situ ion implantation for source/drain contact formation. Si0.5Ge0.5 layers are grown on an ASM Intrepid ES high volume CVD reactor and co-doped with B and Ga. A circular transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::013285f395e2aeafc5074673456571ec
https://doi.org/10.1149/09301.0007ecst
https://doi.org/10.1149/09301.0007ecst
Autor:
Sattar Al-Kabi, John Tolle, Thach Pham, Joshua M. Grant, Huong Tran, Perry C. Grant, Richard A. Soref, Baohua Li, Greg Sun, Shui-Qing Yu, Wei Dou, Yong-Hang Zhang, Yiyin Zhou, Mansour Mortazavi, Wei Du, Joe Margetis
Publikováno v:
ACS Photonics. 6:2807-2815
The GeSn detector offers high-performance Si-based infrared photodetectors with complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we report a comprehensive study...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4714f4603ec64edcba06b75d18a31d40
https://doi.org/10.1021/acsphotonics.9b00845
https://doi.org/10.1021/acsphotonics.9b00845