Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Joe A. Dion"'
Publikováno v:
physica status solidi (a). 202:727-731
Homoepitaxial growth of GaN by metal organic vapor phase epitaxy (MOVPE) was systematically evaluated using nominal c-plane and various vicinal GaN(0001) wafers: 1°, 2°, 4°, and 8° offcut in the directions of (1010) and (1120). It was found that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a063dfd3c3fbe5cca240f080853a567
https://doi.org/10.1002/pssa.200461521
https://doi.org/10.1002/pssa.200461521
Autor:
Lara Fieschi-Corso, Helder Antunes, Edward Lloyd Hutchins, Henry Xin, George R. Brandes, Joe A. Dion, Jeffrey S. Flynn, Rae Van Egas
Publikováno v:
physica status solidi (c). :2327-2330
2 Experimental Thick delta doped Al0.25Ga0.75N layers and Al0.25Ga0.75N/GaN HEMT layers were produced in an Aixtron 200/4 MOCVD system using NH3, TMG, TMA and Si2H6 precursors. The mate- rial was grown on 2-inch, c-plane sapphire at 1220 °C and 100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d94ac2517b36c06a22631761ee060b9
https://doi.org/10.1002/pssc.200303313
https://doi.org/10.1002/pssc.200303313
Autor:
J.S. Flynn, Kanin Chu, K.B. Nichols, R. Actis, R.P. Vaudo, M.T. Pizzella, George R. Brandes, Xueping Xu, Joe A. Dion, P.C. Chao, D.E. Meharry
Publikováno v:
IEEE Electron Device Letters. 25:596-598
High power microwave AlGaN-GaN high electron-mobility transistors (HEMTs) on free-standing GaN substrates are demonstrated for the first time. Measured gate leakage was -2.2 /spl mu/A/mm at -20 V and -10 /spl mu/A/mm at -45 V gate bias. When operated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe31eba9668c6776d404b55380024d4
https://doi.org/10.1109/led.2004.833847
https://doi.org/10.1109/led.2004.833847
Autor:
George R. Brandes, Xian-An Cao, J. L. Garrett, Helder Antunes, L. Fieschi-Corso, Larry B. Rowland, H. P. Xin, Steven Francis Leboeuf, Joe A. Dion, Jeffrey S. Flynn, R. Van Egas, Edward Lloyd Hutchins
Publikováno v:
MRS Proceedings. 798
In this paper, we report the electrical and optical characteristics of Si delta-doped AlGaN cladding layers, p-cladding structure optimization and the impact on the efficiency of 340nm AlGaN UV LEDs. Compared to the uniformly doped n-AlGaN layer, add
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82c75e2370761bdd7508a449620d29ae
https://doi.org/10.1557/proc-798-y3.10
https://doi.org/10.1557/proc-798-y3.10
Autor:
Jeffrey S. Flynn, Helder Antunes, Leah G. Wallace, George R. Brandes, Edward Lloyd Hutchins, Joe A. Dion
Publikováno v:
MRS Proceedings. 743
Delta doping (paused growth doping) was investigated as an alternative to uniformly distributing the dopant in the nitride semiconductor layer. In this work, delta doped layers were produced in MOVPE-grown AlGaN and GaN layers at a susceptor temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d89cae3970bda4b27ec8109da343bc2
https://doi.org/10.1557/proc-743-l11.44
https://doi.org/10.1557/proc-743-l11.44