Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Jodi Iwata-Harms"'
Autor:
Luc Thomas, Jesmin Haq, Ru-Ying Tong, Teng Zhongjian, Shen Dongna, Hideaki Fukuzawa, Po-Kang Wang, Guenole Jan, Son Thai Le, Vignesh Sundar, Vinh Lam, Yu-Jen Wang, Jian Zhu, Renren He, Yang Yi, Tom Zhong, Santiago Serrano-Guisan, Paul Y. Liu, Huanlong Liu, Sahil Patel, Yuan-Jen Lee, Jodi Iwata-Harms
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-7 (2019)
Scientific Reports
Scientific Reports
Perpendicular magnetic anisotropy (PMA) ferromagnetic CoFeB with dual MgO interfaces is an attractive material system for realizing magnetic memory applications that require highly efficient, high speed current-induced magnetic switching. Using this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0da8a16e79ec54d59a1371e363c41417
https://doi.org/10.1038/s41598-019-54466-7
https://doi.org/10.1038/s41598-019-54466-7
Autor:
Yuan-Jen Lee, Yang Yi, Renren He, Vignesh Sundar, Huanlong Liu, Vinh Lam, Son Thai Le, Jodi Iwata-Harms, Sahil Patel, Shen Dongna, Jesmin Haq, Luc Thomas, Ru-Ying Tong, Santiago Serrano-Guisan, Hideaki Fukuzawa, Tom Zhong, Po-Kang Wang, Guenole Jan, Jeffrey Teng, Yu-Jen Wang, Jian Zhu
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
To consider STT-MRAM as an SRAM replacement, the reliability of the MTJ devices has to be demonstrated. A comprehensive study of degradation of STT-MRAM magnetic tunnel junction barrier under stress is presented in this paper. It is found that the br
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05a8e1d614176fcb08d1a502a7cf363f
https://doi.org/10.1109/vlsi-tsa.2019.8804693
https://doi.org/10.1109/vlsi-tsa.2019.8804693
Autor:
Tom Zhong, Santiago Serrano-Guisan, Jesmin Haq, Jodi Iwata-Harms, Guenole Jan, Sahil Patel, Teng Zhongjian, Yuan-Jen Lee, Renren He, Son T. Le, Yang Yi, Paul Liu, Vignesh Sundar, Shen Dongna, Luc Thomas, Ru-Ying Tong, Vinh Lam, Yu-Jen Wang, Jian Zhu, Hideaki Fukuzawa, Po-Kang Wang, Huanlong Liu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
Last-Level-Cache applications at OX technology nodes require devices switching reliably in less than 10ns at currents smaller than 50uA, while preserving data retention up to 85°C. In this paper, we show that both low Gilbert damping and low magneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ecf43055b69484aea50951849f27ca2
https://doi.org/10.1109/iedm.2018.8614700
https://doi.org/10.1109/iedm.2018.8614700
Autor:
Vignesh Sundar, Zhongjian Jeffrey Teng, Yu-Jen Wang, Jian Zhu, Luc Thomas, Ru-Ying Tong, Sahil Patel, Shen Dongna, Vinh Lam, Hideaki Fukuzawa, Yang Yi, Po-Kang Wang, Guenole Jan, Tom Zhong, Jesmin Haq, Son T. Le, Santiago Serrano-Guisan, Renren He, Huanlong Liu, Yuan-Jen Lee, Jodi Iwata-Harms
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
We present for the first time STT-MRAM devices with ultra low operating voltage and power compatible with next generation 0x node logic voltages. By engineering the tunnel barrier and improving the efficiency of the devices we report a record low wri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98a7738f2a2bd93f1ae7e1f1a46263c1
https://doi.org/10.1109/vlsit.2018.8510672
https://doi.org/10.1109/vlsit.2018.8510672
Autor:
Guenole Jan, Vignesh Sundar, Jodi Iwata-Harms, Jian Zhu, Santiago Serrano-Guisan, Po-Kang Wang, Huanlong Liu, Luc Thomas, Ru-Ying Tong
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
Spin-transfer-torque magnetic random access memory (STT-MRAM) is the most promising emerging non-volatile embedded memory. For most applications, a wide range of operating temperatures is required, for example −40 °C to +150 °C for automotive app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb7bd5b90bc0dc58041c7553297153b2
https://pubmed.ncbi.nlm.nih.gov/30258111
https://pubmed.ncbi.nlm.nih.gov/30258111
Autor:
Son T. Le, Santiago Serrano-Guisan, Sahil Patel, Jesmin Haq, Vinh Lam, Shen Dongna, Tom Zhong, Renren He, Yang Yi, Vignesh Sundar, Po-Kang Wang, Guenole Jan, Yu-Jen Wang, Jian Zhu, Huanlong Liu, Paul Liu, Yuan-Jen Lee, Luc Thomas, Ru-Ying Tong, Jodi Iwata-Harms, Teng Zhongjian
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
Scaling STT-MRAM cells beyond 1X technology nodes will require MTJ devices smaller than 30 nm. For such small sizes, process-induced damage becomes a primary factor of device performance. A robust method of assessing magnetic properties of sub-30 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66388db61bc92fbf9fe3e3b6fec8e482
https://doi.org/10.1109/iedm.2017.8268516
https://doi.org/10.1109/iedm.2017.8268516
Autor:
Vignesh Sundar, Yang Yi, Yu-Jen Wang, Jian Zhu, Vinh Lam, Shen Dongna, Jesmin Haq, Guenole Jan, Tom Zhong, Po-Kang Wang, Son T. Le, Sahil Patel, Renren He, Huanlong Liu, Santiago Serrano-Guisan, Paul Liu, Yuan-Jen Lee, Jodi Iwata-Harms, Luc Thomas, Ru-Ying Tong, Teng Zhongjian
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is emerging as a leading candidate for a variety of embedded memory applications ranging from embedded NVM to working memory and last level cache. In this paper, we review recent breakthro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d01a4980cebeec2fdabeffea6d4b2a1
https://doi.org/10.1109/s3s.2017.8308734
https://doi.org/10.1109/s3s.2017.8308734
Autor:
Huanlong Liu, Ru-Ying Tong, Sundar Vignesh, Terry Torng, Vinh Lam, Jesmin Haq, Shen Dongna, Mohammed Benzaouia, Jodi Iwata-Harms, P. Liu, Renren He, A. Wang, Y. Yang, Po-Kang Wang, Guenole Jan, Y. Lee, Jian Zhu, T. Zhong, J. Teng, Luc Thomas, Son Thai Le, Sahil Patel, Santiago Serrano-Guisan
Publikováno v:
2017 IEEE International Magnetics Conference (INTERMAG).
Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f1c8d8e6c6918caee1a908bd917d0e8
https://doi.org/10.1109/intmag.2017.8007621
https://doi.org/10.1109/intmag.2017.8007621
Autor:
Guenole Jan, Jesmin Haq, Luc Thomas, Son Thai Le, T. Zhong, Vinh Lam, Ru-Ying Tong, A. Wang, Po-Kang Wang, Huanlong Liu, Santiago Serrano-Guisan, Sundar Vignesh, Sahil Patel, P. Liu, Renren He, Jodi Iwata-Harms, Y. Lee, Y. Yang, J. Teng, Shen Dongna, Terry Torng, Jian Zhu
Publikováno v:
2017 IEEE International Magnetics Conference (INTERMAG).
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is the leading technology for next generation non-volatile embedded memories [1].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1d1311aa5a8a60ae8ae3f02b811ca94
https://doi.org/10.1109/intmag.2017.8007703
https://doi.org/10.1109/intmag.2017.8007703
Autor:
Vinh Lam, Jeffrey Teng, Son T. Le, Jodi Iwata-Harms, Santiago Serrano-Guisan, Guenole Jan, Yu-Jen Wang, Jian Zhu, Yuan-Jen Lee, Shen Dongna, Huanlong Liu, Luc Thomas, Sahil Patel, Ru-Ying Tong, Jesmin Haq, Po-Kang Wang, Renren He, Terry Torng, Rao Annapragada, Tom Zhong
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
We present recent advances in writing speed of pSTT_MRAM which demonstrate its potential as a candidate for replacement of LCC cache for advanced technology nodes as well as applications where non-volatility may be needed. In this paper we explore th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f14b7c69d42c0d4df1ce112c0826de8b
https://doi.org/10.1109/vlsit.2016.7573362
https://doi.org/10.1109/vlsit.2016.7573362