Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Job Soethoudt"'
Publikováno v:
The Journal of Physical Chemistry C. 124:7163-7173
Area-selective deposition (ASD) is a promising bottom-up manufacturing solution for catalysts and nanoelectronic devices. However, industrial applications are limited as highly selective ASD proces...
Publikováno v:
Journal of Materials Chemistry C. 7:11911-11918
Alkyl-terminated surfaces have received significant interest as growth-blocking surfaces in area-selective deposition (ASD). Gas-phase chemical functionalization is attractive in this context due to its short process times, potentially wide applicabi
Autor:
Marleen H. van der Veen, Herbert Struyf, N. Jourdan, S. Lariviere, V. Vega Gonzalez, O. Varela Pedreira, S. Decoster, Lieve Teugels, Christopher J. Wilson, Zs. Tokei, K. Croes, Annelies Delabie, Job Soethoudt
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Patterns down to 21nm metal pitch (MP) have been used in the hybrid metallization scheme of Ru via prefill followed by a Cu trench metallization. The via resistance for Ru in hybrid with TaNRu/Cu trench fill is benchmarked to Co and Ru dual-damascene
Autor:
Kaat Van Dongen, Fabio Grillo, Esteban A. Marques, J.R. van Ommen, Lilian de Martín, Annelies Delabie, Job Soethoudt
Publikováno v:
Chemistry of Materials, 32 (22)
Chemistry of Materials, 32(22)
Chemistry of Materials, 32(22)
Area-selective deposition (ASD) enables the growth of materials on target regions of patterned substrates for applications in fields ranging from microelectronics to catalysis. Selectivity is often achieved through surface modifications aimed at supp
Autor:
Jan Willem J. Clerix, J. Ruud van Ommen, Job Soethoudt, Annelies Delabie, Esteban A. Marques, Fabio Grillo, Geoffrey Pourtois
Publikováno v:
Advanced Materials Interfaces. 8:2100846
Autor:
Sven Van Elshocht, Esteban A. Marques, J. Ruud van Ommen, Fabio Grillo, Job Soethoudt, Yoann Tomczak, Annelies Delabie, Laura Nyns
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Understanding the growth mechanisms during the early stages of atomic layer deposition (ALD) is of interest for several applications including thin film deposition, catalysis, and area-selective depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f64ca7688ecfda90192a6f4f8757b3c6
https://lirias.kuleuven.be/handle/123456789/644998
https://lirias.kuleuven.be/handle/123456789/644998
Autor:
Arindam Mallik, Basoene Briggs, Janko Versluijs, Christopher J. Wilson, Juergen Bommels, Job Soethoudt, Zsolt Tokei
Publikováno v:
2018 China Semiconductor Technology International Conference (CSTIC).
CMOS area scaling to N5 dimensions will have interconnect metal pitch around 30nm. Patterning such small features, using 193 ArF immersion lithography (193i), is only possible with pitch multiplication techniques such as SADP, SAQP, SAOP, etc. An add
Autor:
Boon Teik Chan, Valentina Spampinato, Annelies Delabie, H. Hody, Job Soethoudt, B. Briggs, Alexis Franquet
Publikováno v:
Advanced Materials Interfaces. 6:1900896
ispartof: ADVANCED MATERIALS INTERFACES vol:6 issue:20 status: published