Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Joao L. Gomes"'
Autor:
Joao L. Gomes, Luis C. Nunes, Filipe M. Barradas, Adam Cooman, Aryan E. F. de Jong, Rob M. Heeres, Jose C. Pedro
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 70:1377-1390
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32bd0f6346e18d37b702e1d91447b427
https://doi.org/10.1109/tmtt.2021.3132930
https://doi.org/10.1109/tmtt.2021.3132930
Publikováno v:
2022 17th European Microwave Integrated Circuits Conference (EuMIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08beb960b1d2e05a88ceca7137dea7d8
https://doi.org/10.23919/eumic54520.2022.9923433
https://doi.org/10.23919/eumic54520.2022.9923433
Autor:
Pedro M. Tome, Telmo R. Cunha, Filipe M. Barradas, Joao L. Gomes, Jose C. Pedro, Luis C. Nunes
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 69:529-540
Charge-trapping phenomena in radio-frequency (RF) power amplifiers (PAs) based on GaN high-electron-mobility transistor (HEMT) technology are understood to be responsible for the dynamic self-biasing behavior that leads to a seemingly intractable slo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::436b9955ff89abaabbfdf38346e76a63
https://doi.org/10.1109/tmtt.2020.3006290
https://doi.org/10.1109/tmtt.2020.3006290
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d78ece10a0ee192136c30c04f4d1cabc
https://doi.org/10.1109/ims37962.2022.9865343
https://doi.org/10.1109/ims37962.2022.9865343
Publikováno v:
2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69850b7af4b2c9f4afdade94a7b0f7b6
https://doi.org/10.1109/inmmic54248.2022.9762169
https://doi.org/10.1109/inmmic54248.2022.9762169
Publikováno v:
Mathematical modeling in materials science of electronic component.
This paper presents a study of the linearizability of AlGaN/GaN HEMT based RF power amplifiers, RFPAs, and its relation with the active device trap activation energy. Based on the theory of thermally activated traps and on the experimental determinat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6554d418d6adf5e76ef301992171f895
https://doi.org/10.29003/m2484.mmmsec-2021/104-107
https://doi.org/10.29003/m2484.mmmsec-2021/104-107
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 67:2465-2474
This paper provides theoretical and experimental evidence that, contrary to what is a widely reported belief, the capture time constant of GaN high-electron-mobility transistor (HEMTs) deep-level traps is not infinitesimally shorter than the modulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f15206d63bde69f0ae32264589392d
https://doi.org/10.1109/tmtt.2019.2921338
https://doi.org/10.1109/tmtt.2019.2921338
Autor:
Filipe M. Barradas, Joao L. Gomes, Pedro M. Tome, Pedro M. Cabral, Telmo R. Cunha, Jose C. Pedro, Luis C. Nunes
Publikováno v:
2021 IEEE MTT-S International Wireless Symposium (IWS).
This work is an overview of the current understanding of memory effects arising from AlGaN/GaN HEMT based RF power amplifiers. It reviews the most widely accepted physical sources of those memory effects and their impact on the amplifier's linearizab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96831ab46bacd788d6d4af31954ce645
https://doi.org/10.1109/iws52775.2021.9499373
https://doi.org/10.1109/iws52775.2021.9499373
Publikováno v:
Mathematical modeling in materials science of electronic component.
This work discusses the necessary modelling efforts needed to build nonlinear equivalent-circuit models that can produce consistent directcurrent (dc) and alternate-current (ac) characteristics of non-quasi-static devices such as GaN/AlGaN HEMTs, sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0128bd5b8accaa80647f72cfb6eaf55e
https://doi.org/10.29003/m1533.mmmsec-2020/106-109
https://doi.org/10.29003/m1533.mmmsec-2020/106-109
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
This paper presents an explanation for the observed differences on the trapping time constants extracted from low frequency $Y_{22}$ and $I_{DS}$ -Deep-Level Transient Spectroscopy (DLTS) on GaN high electron mobility transistors (HEMTs). It is shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a2b72b8d402cbacb54257e862337e0f
https://doi.org/10.1109/ims30576.2020.9223822
https://doi.org/10.1109/ims30576.2020.9223822