A Compact 28-nm FD-SOI CMOS 76–81 GHz Automotive Band Receiver Path with Accurate 0.2° Phase Control Resolution

Autor: Antoine Le Ravallec, Patrice Garcia, Joao Carlos Azevedo Goncalves, Loic Vincent, Jean-Marc Duchamp, Philippe Benech

Publikováno v: 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::87aea00073664eecafa30a319cd2522d
https://doi.org/10.1109/rfic54546.2022.9863096

Millimeter-wave noise source development on SiGe BiCMOS 55-nm technology for applications up to 260 GHz

Autor: Haitham Ghanem, Christophe Gaquiere, Guillaume Ducournau, Daniel Gloria, Francois Danneville, Simon Bouvot, Sylvie Lepilliet, Joao Carlos Azevedo Goncalves

Publikováno v: IEEE Transactions on Microwave Theory and Techniques
IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2019, 67 (9), pp.3732-3742. ⟨10.1109/TMTT.2019.2926289⟩
IEEE Transactions on Microwave Theory and Techniques, 2019, 67 (9), pp.3732-3742. ⟨10.1109/TMTT.2019.2926289⟩

International audience; This paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based on p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66fbdf3cc3b1e8864cc4a10b7f964032
https://hal.archives-ouvertes.fr/hal-03133859

Investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz

Autor: Christoohe Gaouierc, Issa Alaji, Sylvie Lepilliet, Franeois Danneville, Daniel Gloria, Guillaume Ducournau, Joao Carlos Azevedo Goncalves

Publikováno v: 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2018, Nagoya, Japan. ⟨10.1109/IRMMW-THz.2018.8510217⟩

International audience; This paper describes millimeter wave (mmW) on-wafer continues wave (CW) power detection using dedicated high frequency diode junction, integrated on SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was per

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91971dae76e57484900967d77c7bc895
https://hal.science/hal-03272698/document

A D-band passive receiver with 10 dB noise figure for in-situ noise characterization in BiCMOS 55 nm

Autor: Thomas Quemerais, Daniel Gloria, Francois Danneville, Guillaume Ducournau, Sylvie Lepilliet, Joao Carlos Azevedo Goncalves, Simon Bouvot

Publikováno v: 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan 2017, Phoenix, United States. ⟨10.1109/SIRF.2017.7874385⟩

International audience; A millimeter-wave (mmW) frequency passive mixer for in-situ noise characterization in 110-170 GHz (Dband) is demonstrated using STMicroelectronics BiCMOS 55 nm technology. The circuit uses a gate-pumped MOS transistor with tra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70847e0f0bca4f86a960d2e1cd2b370d
https://doi.org/10.1109/sirf.2017.7874385