Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Joanna El Husseini"'
Autor:
Yvan Cuminal, Joanna Kret, Yves Rouillard, Julie Tournet, Alexandre Vauthelin, S. Parola, Eric Tournié, Frédéric Martinez, Etienne Qbesnel, Joanna El Husseini
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, France. pp.0937-0942
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, France. pp.0937-0942
This paper reports on the investigation of Al x Ga 1-x As y Sb 1-y alloys lattice-matched to GaSb for multi-junction solar cell applications. Optical and electrical characterizations of Al x Ga 1-x As y Sb 1-y alloys are carried out to provide accura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6fa4c017cbba8bf78569020e325e22e9
https://hal.archives-ouvertes.fr/hal-02052823
https://hal.archives-ouvertes.fr/hal-02052823
Autor:
A. Subirats, Adam Makosiej, Xavier Federspiel, Olivier Thomas, Joanna El Husseini, X. Garros, Vincent Huard, Jacques Cluzel, Gilles Reimbold, Olivier Weber
Publikováno v:
IEEE Transactions on Electron Devices. 61:3991-3999
In this paper, we present for the first time a direct measurement procedure to characterize the bias temperature instability (BTI)-induced dynamic variability in static random access memory (SRAM) cells. This measurement procedure is based on the sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96265c1500e8021f222ceadc7c432750
https://doi.org/10.1109/ted.2014.2361954
https://doi.org/10.1109/ted.2014.2361954
Autor:
Gilles Reimbold, A. Subirats, X. Garros, Gerard Ghibaudo, Joanna El Husseini, Cyrille Le Royer
Publikováno v:
IEEE Transactions on Electron Devices. 60:2604-2610
The impact of single charge trapping on the threshold voltage Vt of ultrascaled fully depleted silicon-on-insulator transistors is investigated through dynamic variability measurements and 3-D electrostatic simulations. In these undoped Si channel de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0707a9e99f8b776060173ef79201e64
https://doi.org/10.1109/ted.2013.2270568
https://doi.org/10.1109/ted.2013.2270568
Autor:
Joanna El Husseini, Gilles Reimbold, Gerard Ghibaudo, X. Garros, A. Subirats, Emmanuel Vincent
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2015, 62 (2), pp.485-492. ⟨10.1109/TED.2014.2380474⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (2), pp.485-492. ⟨10.1109/TED.2014.2380474⟩
IEEE Transactions on Electron Devices, 2015, 62 (2), pp.485-492. ⟨10.1109/TED.2014.2380474⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (2), pp.485-492. ⟨10.1109/TED.2014.2380474⟩
International audience; In this paper, we revisit the classic single layer defect centric model (DCM), largely used in reliability studies, in the more realistic case of bilayer gate oxide transistors integrating an interface layer and a high-K diele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e531a83918934dd28e07ef69f654b3b5
https://hal.science/hal-01947632
https://hal.science/hal-01947632
Autor:
Subirats, Alexandre, Garros, Xavier, Husseini, Joanna El, Vincent, Emmanuel, Reimbold, Gilles, Ghibaudo, Gerard
Publikováno v:
IEEE Transactions on Electron Devices; Feb2015, Vol. 62 Issue 2, p485-492, 8p
Autor:
El Husseini, Joanna, Garros, Xavier, Cluzel, Jacques, Subirats, Alexandre, Makosiej, Adam, Weber, Olivier, Thomas, Olivier, Huard, Vincent, Federspiel, Xavier, Reimbold, Gilles
Publikováno v:
IEEE Transactions on Electron Devices; Dec2014, Vol. 61 Issue 12, p3991-3999, 9p
Autor:
Subirats, Alexandre, Garros, Xavier, Husseini, Joanna El, Royer, Cyrille Le, Reimbold, Gilles, Ghibaudo, Gerard
Publikováno v:
IEEE Transactions on Electron Devices; Aug2013, Vol. 60 Issue 8, p2604-2610, 7p