Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Joan, Fong"'
Autor:
John E. Cunningham, Ashok V. Krishnamoorthy, Kannan Raj, Roshanak Shafiiha, Mehdi Asghari, Shirong Liao, Cheng-Chih Kung, Joan Fong, Jin-Hyoung Lee, Dazeng Feng, Jin Yao, Hiren Thacker, Ivan Shubin, Guoliang Li, Xuezhe Zheng, Ying Luo
Publikováno v:
Micromachines, Vol 3, Iss 2, Pp 345-363 (2012)
We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality.
Externí odkaz:
https://doaj.org/article/855d77c5c3cd477a81a914ee9ab72c13
Autor:
Longsheng, Wu, Yue, Zhou, Yan, Cai, Xiyuan, Cao, Ruxue, Wang, Minghao, Qi, Joan, Fong, Dazeng, Feng, Aimin, Wu
Publikováno v:
Optics express. 28(5)
We present the design of an adiabatic taper coupled Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::085aa61d9057a71bbb6ba94851fcfada
https://pubmed.ncbi.nlm.nih.gov/32225983
https://pubmed.ncbi.nlm.nih.gov/32225983
Autor:
Mehdi Asghari, Zhou Zhou, Jacob S. Levy, Wei Qian, Roshanak Shafiiha, Hong Liang, Joan Fong, B. Jonathan Luff, Zhi Li, Cheng-Chih Kung, Dazeng Feng
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 19:64-73
Following significant research and development work over the past few years, silicon photonics has become a promising candidate to provide low-power, low-cost, and high-speed photonic links for telecommunication, data communication, and interconnect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81b06a307117f3f1438d6a41cd3b843d
https://doi.org/10.1109/jstqe.2013.2278881
https://doi.org/10.1109/jstqe.2013.2278881
Autor:
Jin Yao, Shirong Liao, Ashok V. Krishnamoorthy, Dazeng Feng, Ivan Shubin, Cheng-Chih Kung, John E. Cunningham, Ying Luo, Xuezhe Zheng, Jin-Hyoung Lee, Kannan Raj, Joan Fong, Hiren D. Thacker, Mehdi Asghari, Guoliang Li, Roshanak Shafiiha
Publikováno v:
Micromachines, Vol 3, Iss 2, Pp 345-363 (2012)
Micromachines
Volume 3
Issue 2
Pages 345-363
Micromachines
Volume 3
Issue 2
Pages 345-363
We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60e013a228b60c2e720bbd4c1ce0a8f5
http://www.mdpi.com/2072-666X/3/2/345
http://www.mdpi.com/2072-666X/3/2/345
Publikováno v:
IEEE Photonics Technology Letters. 20:1968-1970
We have designed and fabricated a low-loss polarization-insensitive silicon-on-insulator-based photonic integrated circuit wavelength-division-multiplexing transceiver filter for triplexer applications. The filter is realized by two-stage Fourier-tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a26079fc75fee5f6fd4e6f33ad8d46a9
https://doi.org/10.1109/lpt.2008.2005587
https://doi.org/10.1109/lpt.2008.2005587
Autor:
M. Gao, Ashok Balakrishnan, Joan Fong, J. Yin, Cheng-Chih Kung, Wei Qian, Mehdi Asghari, Hong Liang, Dazeng Feng, M. Pearson, S. Bidnyk
Publikováno v:
IEEE Photonics Technology Letters. 18:2392-2394
A novel design of a silicon-on-insulator (SOI) filter for passive optical network applications is described. The SOI filter comprises a monolithically integrated planar reflective grating and a multistage Mach-Zehnder interferometer. The fabricated d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7fb0fe410c7a1c768b2422ca0f10a4c
https://doi.org/10.1109/lpt.2006.885592
https://doi.org/10.1109/lpt.2006.885592
Autor:
J. E. Cunningham, Roshanak Shafiiha, B. Jonathan Luff, Joan Fong, Ying Luo, Shirong Liao, Ashok V. Krishnamoorthy, Hong Liang, B. J. Bijlani, Mehdi Asghari, Dazeng Feng
Publikováno v:
The 9th International Conference on Group IV Photonics (GFP).
We demonstrate a high speed GeSi EA modulator with a broad operating wavelength range of over 30 nm near 1550 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b1a755874f62fa576411e7b1914c0fb
https://doi.org/10.1109/group4.2012.6324185
https://doi.org/10.1109/group4.2012.6324185
Autor:
Roshanak Shafiiha, Dazeng Feng, J. E. Cunningham, Daniel C. Lee, A. J. Zilkie, B. J. Bijlani, Ashok V. Krishnamoorthy, M. Asghari, Wei Qian, P. Seddighian, Joan Fong, Bradley Jonathan Luff, Xuezhe Zheng
Publikováno v:
The 9th International Conference on Group IV Photonics (GFP).
We report a 9.5% wall-plug-efficient un-cooled external-cavity DBR laser built with a III–V-semiconductor reflective-SOA edge-coupled to an SOI waveguide containing a Bragg grating mirror. The hybrid laser is suitable for power efficient, CMOS-comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8834426ea21d7f66d4c0217de205452
https://doi.org/10.1109/group4.2012.6324172
https://doi.org/10.1109/group4.2012.6324172
Autor:
Dazeng Feng, Joan Fong, Wei Qian, B. Jonathan Luff, Roshanak Shafiiha, Shirong Liao, Yong Liu, Daniel C. Lee, Joe Zhou, Mehdi Asghari, Cheng-Chih Kung, Hong Liang, Wayne White
Publikováno v:
Photonic Microdevices/Microstructures for Sensing IV.
We report a novel, compact design of high speed Ge photo detector integrated with an echelle demultiplexer on a large cross-section SOI platform with low insertion loss and low fiber coupling loss. A narrow Ge photo detector waveguide is directly but
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e65a9d5ac674d5b9244851fba81cd63d
https://doi.org/10.1117/12.920831
https://doi.org/10.1117/12.920831