Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Joachim Wurfl"'
Publikováno v:
IEEE Access, Vol 10, Pp 77826-77836 (2022)
This paper presents the design of a dual-band power amplifier (PA) featuring similar performance at 28 GHz and 38 GHz. In the new radio (NR) of the fifth generation (5G) communication system, the inter-band carrier aggregation technique is commonly a
Externí odkaz:
https://doaj.org/article/a67e389d9ae347da8806c7cbfacda9e7
Autor:
Eldad Bahat Treidel, Oliver Hilt, Veit Hoffmann, Frank Brunner, Nicole Bickel, Andreas Thies, Kornelius Tetzner, Hassan Gargouri, Christian Huber, Konstanty Donimirski, Joachim Wurfl
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 215-228 (2021)
ON-state conductance properties of vertical GaN n-channel trench MISFETs manufactured on different GaN substrates and having different gate trench orientations are studied up to 200 °C ambient temperature. The best performing devices, with a maximum
Externí odkaz:
https://doaj.org/article/c224af71832e40efa79c552bf05911a1
Autor:
Carsten Kuring, Mihaela Wolf, Xiaomeng Geng, Oliver Hilt, Jan Bocker, Joachim Wurfl, Sibylle Dieckerhoff
Publikováno v:
IEEE Transactions on Power Electronics. 37:11896-11910
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae45eda399b1b739a20b3974487e4926
https://doi.org/10.1109/tpel.2022.3172659
https://doi.org/10.1109/tpel.2022.3172659
Publikováno v:
2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f99cfe71a30fc19b9d1e2ee8ac10a976
https://doi.org/10.1109/rfit54256.2022.9882348
https://doi.org/10.1109/rfit54256.2022.9882348
Publikováno v:
2021 IEEE Asia-Pacific Microwave Conference (APMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4db689d60de80ea78ea08c46662e305
https://doi.org/10.1109/apmc52720.2021.9661627
https://doi.org/10.1109/apmc52720.2021.9661627
Autor:
Carsten Kuring, Kornelius Tetzner, Andreas Popp, Soren Heucke, Oliver Hilt, Saud Bin Anooz, Joachim Wurfl, Sibylle Dieckerhoff
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::203f68b2b136c6cb51769e68e0c7eea8
https://doi.org/10.1109/wipda49284.2021.9645079
https://doi.org/10.1109/wipda49284.2021.9645079
Publikováno v:
2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0913a19ff7f4c1ab3a849753a948409
https://doi.org/10.23919/epe21ecceeurope50061.2021.9570437
https://doi.org/10.23919/epe21ecceeurope50061.2021.9570437
Publikováno v:
2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
Operating at millimeter-wave or above has been the major trend for the next-generation wireless communication systems to acquire enough bandwidth. Consequently, antenna arrays with large number of elements are popular for proper transmission and rece
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d25cf1d85e7ac272b9e98b82e6e5edc8
https://doi.org/10.1109/rfit52905.2021.9565202
https://doi.org/10.1109/rfit52905.2021.9565202
Autor:
Adam Ramer, Viktor Krozer, Günther Tränkle, Ahid S. Hajo, Irmantas Kašalynas, Hans-Joachim Wurfl, Wolfgang Heinrich, Hartmut G. Roskos, Sebastian Boppel, Maris Bauer, Gintaras Valušis, Alvydas Lisauskas, M. Ragauskas, Sergey A. Chevtchenko
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 6:348-350
This letter reports on the influence of illumination conditions on the detector response of three-terminal devices. Antenna-coupled field-effect transistors for the plasmonic detection of THz radiation (TeraFETs) were realized using a 0.25- $\mu\hbox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4db89a8907ab81defb321afed1a6389
https://doi.org/10.1109/tthz.2016.2520202
https://doi.org/10.1109/tthz.2016.2520202
Autor:
Kornelius Tetzner, Robert Schewski, Andreas Popp, Saud Bin Anooz, Ta-Shun Chou, Ina Ostermay, Holm Kirmse, Joachim Würfl
Publikováno v:
APL Materials, Vol 10, Iss 7, Pp 071108-071108-7 (2022)
The present work investigates the use of the refractory metal alloy TiW as a possible candidate for the realization of ohmic contacts to the ultrawide bandgap semiconductor β-Ga2O3. Ohmic contact properties were analyzed by transfer length measureme
Externí odkaz:
https://doaj.org/article/ec16b13d5d4c4bddbfc40f4df28852a7