Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Joachim Pelka"'
Autor:
Dirk Beernaert, Toshiro Hiramoto, Kosmas Galatsis, Lothar Pfitzner, Roger DeKeersmaecker, Paolo Gargini, Joachim Pelka
Publikováno v:
IEEE Technology and Society Magazine. 34:21-30
Nanotechnology exploded in scientific publications in the year 2000. It became clear in the subsequent years that the magnitude and opportunities offered in nanotechnology research and development exceeded the research capabilities of any single enti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::219728a5520f1087ed5088d06191bce9
https://doi.org/10.1109/mts.2015.2425811
https://doi.org/10.1109/mts.2015.2425811
Autor:
Joachim Pelka
Publikováno v:
Nanoelectronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d239fe5ebe56e361b8cd758f084a6e0
https://doi.org/10.1002/9783527800728.ch23
https://doi.org/10.1002/9783527800728.ch23
Autor:
Alfons Botthof, Joachim Pelka
Mikrosystemtechnik, entstanden aus der Ergänzung der Mikroelektronik durch andere Mikrotechniken, ermöglicht heute die Realisierung vollständiger Systeme für unterschiedlichste Anwendungen auf kleinstem Raum. Die Bewertung des Potenzials einer Mi
Autor:
Joachim Pelka
Publikováno v:
Microelectronic Engineering. 13:487-491
A new approach for dry-etch simulation is presented which combines the features of a three-dimensional cell model with Monte-Carlo methods. This algorithm is able to simulate etching by elementary processes considering different kinds of particles co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29e9fb712750c55435e0a2062e582813
https://doi.org/10.1016/0167-9317(91)90139-5
https://doi.org/10.1016/0167-9317(91)90139-5
Autor:
Alfons Botthof, Joachim Pelka
Publikováno v:
Mikrosystemtechnik ISBN: 9783662087602
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8938e64480e2860ba13d00caa8285ce3
https://doi.org/10.1007/978-3-662-08759-6_1
https://doi.org/10.1007/978-3-662-08759-6_1
Publikováno v:
SPIE Proceedings.
The formation process for trench capacitor etching and its mechanisms in single-crystal silicon with a Cl2/SiCl4 reactive plasma using a multi frequency discharge etch reactor is developed. Trenches are etched using a SiO2 mask on wafers with 150 mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7df55bbd863d1d86fe4bdc26077f701c
https://doi.org/10.1117/12.56931
https://doi.org/10.1117/12.56931
Publikováno v:
Advanced Techniques for Integrated Circuit Processing.
Oxygen plasmas either in a reactive ion etching reactor or in a reactive ion beam etcher are used to demonstrate the capability to produce sub-half-micron features in photoresists with high aspect ratios in multi-level technique. Lower local etch rat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0652a43c1854ad1b60bf702612db5df3
https://doi.org/10.1117/12.48905
https://doi.org/10.1117/12.48905
Autor:
Joachim Pelka
Publikováno v:
Advanced Techniques for Integrated Circuit Processing.
A survey is given of the field of dry etch simulation. The state-of-the-art of sheath and profile simulation is discussed using the simulator ADEPT as an example. Different approaches for two-dimensional simulation are presented starting with simple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c95f113402ff0b6122393e9d35128022
https://doi.org/10.1117/12.48902
https://doi.org/10.1117/12.48902
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