Zobrazeno 1 - 10
of 319
pro vyhledávání: '"Joachim N. Burghartz"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 7, Pp n/a-n/a (2024)
Abstract Flexible low‐voltage organic thin‐film transistors (TFTs) with Ag source/drain contacts are fabricated, and the contact resistance is measured using the transfer length method. The TFTs are fabricated in the inverted coplanar (bottom‐g
Externí odkaz:
https://doaj.org/article/e94c8ba57c2e45aca4a92bbd149ec992
Autor:
Matthias Moser, Mamta Pradhan, Mohammed Alomari, Michael Heuken, Thomas Schmitt, Ingmar Kallfass, Joachim N. Burghartz
Publikováno v:
Power Electronic Devices and Components, Vol 4, Iss , Pp 100032- (2023)
In this work, multi-layer PECVD SiNx/SiNx and SiNx/SiOy passivations are developed featuring very high soft breakdown strength and tunable stress properties, which would allow for stress engineering and wafer bow minimization. AlGaN/GaN-on-Si wafers
Externí odkaz:
https://doaj.org/article/15d182dfd302449abb4a8028a01b8af5
Autor:
Mamta Pradhan, Mohammed Alomari, Matthias Moser, Dirk Fahle, Herwig Hahn, Michael Heuken, Joachim N. Burghartz
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 748-755 (2021)
In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility
Externí odkaz:
https://doaj.org/article/e8048e097cbd4bdabb15a26b5cde3f5d
Autor:
James W. Borchert, Boyu Peng, Florian Letzkus, Joachim N. Burghartz, Paddy K. L. Chan, Karin Zojer, Sabine Ludwigs, Hagen Klauk
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-11 (2019)
The widespread adoption of organic thin-film transistors (TFTs) in low-voltage high-frequency device applications is impeded by the contact resistance in the TFTs. Here, the authors report record-low contact resistance in bottom-gate, bottom-contact
Externí odkaz:
https://doaj.org/article/1a6c96bd584f489896055bae99287e28
Autor:
Joachim N. Burghartz, Golzar Alavi, Bjorn Albrecht, Thomas Deuble, Mourad Elsobky, Saleh Ferwana, Christine Harendt, Yigit Mahsereci, Harald Richter, Zili Yu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 776-783 (2019)
This paper reports on the status of a comprehensive ten-year research and development effort toward hybrid system-in-foil (HySiF). In HySiF, the merits of high-performance integrated circuits on ultra-thin chips and of large-area and discrete electro
Externí odkaz:
https://doaj.org/article/bb64a3b25bfb4cc39bd5683382dd2bc9
Autor:
Mourad Elsobky, Golzar Alavi, Björn Albrecht, Thomas Deuble, Christine Harendt, Harald Richter, Zili Yu, Joachim N. Burghartz
Publikováno v:
Proceedings, Vol 2, Iss 13, p 748 (2018)
Hybrid System-in-Foil exploits the complementary benefits of integrating embedded silicon chips with on-foil passive and active electronic components. In this work, the design, fabrication and characterization of three on-foil components, namely a hu
Externí odkaz:
https://doaj.org/article/3931a53734d343038176875db66f0c34
Autor:
Juergen Sterzel, Markus Schubert, Uwe Schmidt, Markus Nicke, Franz Hutter, Christine Harendt, Heinz-Gerd Graf, Joachim N. Burghartz, Jan Dirk Schulze Spuentrup
Publikováno v:
Sensors, Vol 8, Iss 10, Pp 6340-6354 (2008)
A 664 x 664 element Active Pixel image Sensor (APS) with integrated analog signal processing, full frame synchronous shutter and random access for applications in star sensors is presented and discussed. A thick vertical diode array in Thin Film on C
Externí odkaz:
https://doaj.org/article/3784383a992a4379903ed2d5bd1b7bbb
Autor:
Ulrike Passlack, Nicolai Simon, Volker Bucher, Christine Harendt, Thomas Stieglitz, Joachim N. Burghartz
Publikováno v:
ACS Applied Materials & Interfaces. 15:16221-16231
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::930353a0132fc47bb189ab348acd2c21
https://doi.org/10.1021/acsami.2c22513
https://doi.org/10.1021/acsami.2c22513
Autor:
Tanumita Haldar, Tobias Wollandt, Jürgen Weis, Ute Zschieschang, Hagen Klauk, R. Thomas Weitz, Joachim N. Burghartz, Michael Geiger
Publikováno v:
Science Advances. 9
One of the circuit topologies for the implementation of unipolar integrated circuits (circuits that use either p-channel or n-channel transistors, but not both) is the zero- V GS architecture. Zero- V GS circuits often provide excellent static perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e8bc5f0ddbcb794c7bd6f1e395bc818
https://doi.org/10.1126/sciadv.add3669
https://doi.org/10.1126/sciadv.add3669
Autor:
Ulrike Passlack, Christine Harendt, Mourad Elsobky, Joachim N. Burghartz, Yigit Mahsereci, Cor Scherjon
Publikováno v:
IEEE Sensors Journal. 21:26345-26354
Hybrid Systems-in-Foil (HySiF) encompass large-area thin-film electronics and ultrathin, high performance CMOS chips, which are integrated into a flexible polymeric foil substrate. In this work, the individual components of a customized flexible sens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74b0caa5d885a6466f756e498d075995
https://doi.org/10.1109/jsen.2021.3066878
https://doi.org/10.1109/jsen.2021.3066878