Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Joachim E, Sestoft"'
Autor:
Damon J. Carrad, Lunjie Zeng, Mikelis Marnauza, Erik Johnson, Dags Olsteins, Kasper Grove-Rasmussen, Joeri de Bruijckere, Joachim E. Sestoft, Thomas Kanne, Eva Olsson, Jesper Nygård
Publikováno v:
Nature Nanotechnology
Semiconductor–superconductor hybrids are widely used to realize complex quantum phenomena, such as topological superconductivity and spins coupled to Cooper pairs. Accessing new, exotic regimes at high magnetic fields and increasing operating tempe
Autor:
Joachim E. Sestoft, Aske N. Gejl, Thomas Kanne, Rasmus D. Schlosser, Daniel Ross, Daniel Kjær, Kasper Grove‐Rasmussen, Jesper Nygård
Publikováno v:
Sestoft, J E, Gejl, A N, Kanne, T, Schlosser, R D, Ross, D, Kjær, D, Grove-Rasmussen, K & Nygård, J 2022, ' Scalable Platform for Nanocrystal-Based Quantum Electronics ', Advanced Functional Materials, vol. 32, no. 28, 2112941 . https://doi.org/10.1002/adfm.202112941
Unlocking the full potential of nanocrystals in electronic devices requires scalable and deterministic manufacturing techniques. A platform offering compelling paths to scalable production is microtomy, the technique of cutting thin lamellas with lar
Autor:
Thomas, Kanne, Mikelis, Marnauza, Dags, Olsteins, Damon J, Carrad, Joachim E, Sestoft, Joeri, de Bruijckere, Lunjie, Zeng, Erik, Johnson, Eva, Olsson, Kasper, Grove-Rasmussen, Jesper, Nygård
Publikováno v:
Nature nanotechnology. 16(7)
Semiconductor-superconductor hybrids are widely used to realize complex quantum phenomena, such as topological superconductivity and spins coupled to Cooper pairs. Accessing new, exotic regimes at high magnetic fields and increasing operating tempera
Autor:
Sara Martí-Sánchez, Sebastian Heedt, Peter Krogstrup, Alexandra Fursina, Timm Swoboda, Leo P. Kouwenhoven, Francesco Borsoi, Pavel Aseev, Jordi Arbiol, Joachim E. Sestoft, Luca Binci, R. Koops, Guanzhong Wang, Emanuele Uccelli, Filip Krizek, Frenk Boekhout, Philippe Caroff
Publikováno v:
Nano Letters, 1, 19, 218-227
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nano Letters
Aseev, P, Fursina, A, Boekhout, F, Krizek, F, Sestoft, J E, Borsoi, F, Heedt, S, Wang, G, Binci, L, Marti-Sanchez, S, Swoboda, T, Koops, R, Uccelli, E, Arbiol, J, Krogstrup, P, Kouwenhoven, L P & Caroff, P 2019, ' Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks ', Nano Letters, vol. 19, no. 1, pp. 218-227 . https://doi.org/10.1021/acs.nanolett.8b03733
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Nano Letters: a journal dedicated to nanoscience and nanotechnology, 19(1)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nano Letters
Aseev, P, Fursina, A, Boekhout, F, Krizek, F, Sestoft, J E, Borsoi, F, Heedt, S, Wang, G, Binci, L, Marti-Sanchez, S, Swoboda, T, Koops, R, Uccelli, E, Arbiol, J, Krogstrup, P, Kouwenhoven, L P & Caroff, P 2019, ' Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks ', Nano Letters, vol. 19, no. 1, pp. 218-227 . https://doi.org/10.1021/acs.nanolett.8b03733
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Nano Letters: a journal dedicated to nanoscience and nanotechnology, 19(1)
Selective-area growth is a promising technique for enabling of the fabrication of the scalable III–V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::110d9841086fd09bf73bec464f975344
http://resolver.tudelft.nl/uuid:b64f439a-9ef2-413c-9033-66601d7fd295
http://resolver.tudelft.nl/uuid:b64f439a-9ef2-413c-9033-66601d7fd295
Autor:
Jordi Arbiol, Yu Liu, Tomaš Stankevič, Peter Krogstrup, Sara Martí-Sánchez, Emanuele Uccelli, Sabbir A. Khan, Saulius Vaitiekenas, Filip Krizek, Joachim E. Sestoft, Frenk Boekhout, Leo P. Kouwenhoven, Lucas Casparis, Alexander M. Whiticar, Pavel Aseev, Alexandra Fursina, Charles Marcus, R. Koops
Publikováno v:
Physical review materials
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Physical Review Materials, 2(9)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Physical Review Materials
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Physical Review Materials, 2(9)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Physical Review Materials
arXiv:1802.07808v2
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc1f8e2b7aa398c4a8828f919418d3e8
http://resolver.tudelft.nl/uuid:d8a087f0-1abd-4163-b405-1705c14a9f00
http://resolver.tudelft.nl/uuid:d8a087f0-1abd-4163-b405-1705c14a9f00
Autor:
Peter Krogstrup, Alexander M. Whiticar, Chris Palmstrom, Charles Marcus, Sara Martí-Sánchez, Joachim E. Sestoft, Jordi Arbiol, Lucas Casparis, Mingtang Deng, S. Vaitiekėnas, Filip Krizek
Publikováno v:
Physical Review Letters
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC
instname
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC
instname
We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0ae254dd753381fcbb6f7486c6d2a12
https://ddd.uab.cat/record/216221
https://ddd.uab.cat/record/216221
Autor:
Erik Johnson, Brian Tarasinski, Charles Marcus, Thomas Kanne, Michael Wimmer, Joachim E. Sestoft, Daniel Sherman, Aske Nørskov Gejl, Jeremy S. Yodh, Jesper Nygård, Peter Krogstrup, Thomas Jespersen, Merlin von Soosten, Mingtang Deng
Publikováno v:
Sestoft, J E, Kanne, T, Gejl, A N, von Soosten, M, Yodh, J S, Sherman, D, Tarasinski, B, Wimmer, M, Johnson, E, Deng, M, Nygard, J, Jespersen, T S, Marcus, C M & Krogstrup, P 2018, ' Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection ', Physical Review Materials, vol. 2, no. 4, 044202 . https://doi.org/10.1103/PhysRevMaterials.2.044202
Physical Review Materials
Physical Review Materials
The combination of strong spin-orbit coupling, large $g$-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c08fe5b14e5fdcd540b97d1c31b03c4
http://arxiv.org/abs/1711.06864
http://arxiv.org/abs/1711.06864
Autor:
Søren Bredmose Simonsen, Jesper Nygård, Thomas Kanne, Aske Nørskov Gejl, Joachim E. Sestoft, Erik Johnson, Peter Krogstrup
Publikováno v:
European Microscopy Congress 2016: Proceedings
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4da2629ef1a97df8d4058b9782a92b3d
https://doi.org/10.1002/9783527808465.emc2016.6762
https://doi.org/10.1002/9783527808465.emc2016.6762
Autor:
Thomas Kanne, Peter Krogstrup, Jakob Meyer-Holdt, Aske Nørskov Gejl, Jesper Nygård, Lunjie Zeng, Eva Olsson, Erik Johnson, Joachim E. Sestoft
Publikováno v:
Nanotechnology. 27(36)
Semiconducting nanowires grown by quasi-van-der-Waals epitaxy on graphite flakes are a new class of hybrid materials that hold promise for scalable nanostructured devices within opto-electronics. Here we report on high aspect ratio and stacking fault
Autor:
Timo Mutas, S. J. Pauka, Yu Liu, Sabbir A. Khan, Lukas Stampfer, Martin Espiñeira Cachaza, Maja C. Cassidy, Joachim E. Sestoft, Peter Krogstrup, Elisabetta Maria Fiordaliso, Thomas Sand Jespersen, Filip Krizek, Svetlana Korneychuk, Ajuan Cui, Jung-Hyun Kang, Charalampos Lampadaris, Rawa Tanta
Publikováno v:
ACS Nano
Khan, S A, Lampadaris, C, Cui, A, Stampfer, L, Liu, Y, Pauka, S J, Cachaza, M E, Fiordaliso, E M, Kang, J-H, Korneychuk, S, Mutas, T, Sestoft, J E, Krizek, F, Tanta, R, Cassidy, M C, Jespersen, T S & Krogstrup, P 2020, ' Highly Transparent Gatable Superconducting Shadow Junctions ', ACS Nano, vol. 14, no. 11, pp. 14605-14615 . https://doi.org/10.1021/acsnano.0c02979
Khan, S A, Lampadaris, C, Cui, A, Stampfer, L, Liu, Y, Pauka, S J, Cachaza, M E, Fiordaliso, E M, Kang, J-H, Korneychuk, S, Mutas, T, Sestoft, J E, Krizek, F, Tanta, R, Cassidy, M C, Jespersen, T S & Krogstrup, P 2020, ' Highly Transparent Gatable Superconducting Shadow Junctions ', ACS Nano, vol. 14, no. 11, pp. 14605-14615 . https://doi.org/10.1021/acsnano.0c02979
Gate-tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological