Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Joachim Doering"'
Autor:
Christoph Brandstaetter, Ernst Haugeneder, Stefan Eder-Kapl, Hans-Joachim Doering, Helmut Langfischer, Martin Witt, Joerg Eichholz, Joachim Heinitz, Klaus Reimer
Publikováno v:
Microelectronic Engineering. 83:968-971
A proof-of-concept multi beam blanking device (''blanking demonstrator'') has been fabricated for the projection mask-less lithography project. It comprises a Si chip with approx. 4000 openings (each has a size of 8x8@mm^2) etched through with adjace
Autor:
Matthias Slodowski, Wolfgang Dorl, Joachim Heinitz, Matthias W. Klein, Thomas Elster, Hans-Joachim Doering, Ulf Weidenmüller, Ines A. Stolberg, Marc Schneider
Publikováno v:
Alternative Lithographic Technologies IV.
In the ITRS roadmap [1] increasingly long mask write and cycle time is explicitly addressed as a difficult challenge in mask fabrication for the 16nm technology node and beyond. Write time reduction demands have to be seen in relation to correspondin
Publikováno v:
Alternative Lithographic Technologies III.
According to the ITRS [1] photo mask is a significant challenge for the 22nm technology node requirements and beyond. Mask making capability and cost escalation continue to be critical for future lithography progress. On the technological side mask s
Autor:
Arnd Stoeckel, Monika Boettcher, Renate Jaritz, Hans-Joachim Doering, Juergen Gramss, Ulf Weidenmueller
Publikováno v:
27th European Mask and Lithography Conference.
Multi Shaped Beam (MSB) throughput simulation results have already been published in the past. An IC mask set of a 32nm node logic device was one of the applications that had been analyzed in more detail. In this paper we want to highlight results of
Autor:
Hans Ulrich Hund, Joachim Doering, Heinz Berke, H. William Bosch, Wolfgang Bidell, Elisabeth Plappert
Publikováno v:
Inorganic Chemistry. 32:502-507
On reaction of [Y(OCH[sub 2]CH[sub 2]OMe)[sub 3]][sub 10] (2) with [(thd)Cu(OCH[sub 2]CH[sub 2]OMe)][sub 4] (1a) and [(hfd)Cu(OCH[sub 2]CH[sub 2]OMe)][sub 4] (1b) (thd = 2,2,6,6-tetramethyl-3,5-heptanedione; hfd = 1,1,1,5,5,5-hexafluoroacetylacetone)
Autor:
Martin Sczyrba, Juergen Gramss, Ulf Weidenmueller, Michael Finken, Arnd Stoeckel, Hans-Joachim Doering, Martin Bloecker, Timo Wandel, Detlef Melzer
Publikováno v:
SPIE Proceedings.
Photomask lithography for the 22nm technology node and beyond requires new approaches in equipment as well as mask design. Multi Shaped Beam technology (MSB) for photomask patterning using a matrix of small beamlets instead of just one shaped beam, i
Magnetic properties of high-nuclearity spin clusters. Fourteen- and fifteen-oxovanadium(IV) clusters
Publikováno v:
Scopus-Elsevier
The magnetic properties of K 6 [V 15 As 6 O 42 (H 2 O)].8H 2 O (V 15 ) and (NH 4 ) 6 [V 14 As 8 O 42 (SO 3 )] (V 14 ) which comprise fifteen- and fourteen-vanadium(IV) ions, respectively, have been investigated. The analysis of the magnetic susceptib
Publikováno v:
Alternative Lithographic Technologies.
This paper describes a new multi beam approach in electron beam lithography called Multi Shaped Beam (MSB). Based on the well known Variable Shaped Beam (VSB) principle, the single shaped beam arrangement is extended and complemented by an array of i
Autor:
Johannes Kretz, Juergen Gramss, Laurent Pain, Hans-Joachim Doering, Peter Hahmann, Monika Boettcher, Ines A. Stolberg
Publikováno v:
23rd European Mask and Lithography Conference.
In semiconductor industry time to market is one of the key success factors. Therefore fast prototyping and low-volume production will become extremely important for developing process technologies that are well ahead of the current technological leve
Autor:
Maati Talmi, Peter Jochl, Thomas Elster, Ramona Eberhardt, Ernst Haugeneder, Stefan Eder-Kapl, Hans-Joachim Doering, Olaf Fortagne, Juergen Saniter, Klaus Reimer, Joachim Heinitz, Gertraud Lammer, Klaus Kroenert, Christoph Brandstaetter, Hans Loeschner
Publikováno v:
SPIE Proceedings.
Electron beam based Projection Mask-Less Lithography (PML2) is one of the promising candidates for fast chip devel-opment and prototyping as well as for small and medium volume device production for the 45nm technology node and beyond. The concept of