Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Jo-Han Hung"'
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 2, Pp 130-137 (2020)
The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage ope
Externí odkaz:
https://doaj.org/article/6b783c98f90e4882a39c54f221a86dd1
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 2, Pp 130-137 (2020)
The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage ope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b89bdf53065d2e24ef9acd3c77d026a
https://doi.org/10.1109/jxcdc.2020.3032903
https://doi.org/10.1109/jxcdc.2020.3032903