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pro vyhledávání: '"Jo Hak Jeong"'
Autor:
Jaewook Yoo, Hyeun Seung Jo, Seung‐Bae Jeon, Taehwan Moon, Hongseung Lee, Seongbin Lim, Hyeonjun Song, Binhyeong Lee, Soon Joo Yoon, Soyeon Kim, Minah Park, Seohyeon Park, Jo Hak Jeong, Keun Heo, Yoon Kyeung Lee, Peide D. Ye, TaeWan Kim, Hagyoul Bae
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract The amorphous In─Ga─Zn─O (a‐IGZO) thin film transistors (TFTs) have attracted attention as a cell transistor for the next generation DRAM architecture because of its low leakage current, high mobility, and the back‐end‐of‐line
Externí odkaz:
https://doaj.org/article/1eabcbe2b2df4a7f963d06ee90c48fc3
