Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Jože Furlan"'
Publikováno v:
physica status solidi c. 11:200-205
Optical properties of amorphous semiconductors are influenced by applied or built-in electric fields. Measurements of the optical absorption change of device grade intrinsic hydrogenated amorphous silicon were performed indirectly by measuring the op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e221e448c41e868d8469798138b258d
https://doi.org/10.1002/pssc.201300176
https://doi.org/10.1002/pssc.201300176
Autor:
Jože Furlan, Matija Pirc
Publikováno v:
IEEE Transactions on Electron Devices. 58:4318-4323
A theoretical model for the optical absorption of amorphous silicon (a-Si) at high electric field aimed for ease of use is developed. Optical absorption is proportional to the number of possible transitions from valence band to conduction band. When
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8138b0ef201f6bebe557f5f024fa9070
https://doi.org/10.1109/ted.2011.2169068
https://doi.org/10.1109/ted.2011.2169068
Publikováno v:
physica status solidi c. 7:646-649
In this paper optical properties of intrinsic hydrogenated amorphous silicon (i -a-Si:H) at high electric field are studied. A theoretical model for an absorption coefficient that predicts its increase at higher electric field has been developed base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73ec1fb2a528df2178a225e581e8e820
https://doi.org/10.1002/pssc.200982788
https://doi.org/10.1002/pssc.200982788
Autor:
Jože Furlan
Publikováno v:
Progress in Quantum Electronics. 25:55-96
In describing high-field effects on electric conductivity and on carrier transport in pn junctions, different approaches and approximations have been used as the basis for the theoretical representation of high-field effects. In this review the basic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a1ea1963821e82fa9b8221ebbdeb33e
https://doi.org/10.1016/s0079-6727(01)00003-9
https://doi.org/10.1016/s0079-6727(01)00003-9
Publikováno v:
Journal of Applied Physics. 83:4518-4521
We have used our numerical simulator to examine the function of a thin microcrystalline p(μc-Si:H) layer in a p-i-n hydrogenated amorphous silicon (a-Si:H) based solar cell. In the analysis of a p(μc-Si:H)-i-n structure, three parameter sets were c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::242cb909ecc6aeac2ea4e10297735b3d
https://doi.org/10.1063/1.367214
https://doi.org/10.1063/1.367214
Publikováno v:
Journal of Applied Physics. 79:8537-8540
Using a numerical device simulation program, the band‐gap engineering in CdS/Cu(In,Ga)Se2 solar cells is examined. The device physics of different design concepts is analysed. Normal band‐gap grading improves performance, especially due to the ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9977c996ef082dc6ed8ddabff463f270
https://doi.org/10.1063/1.362533
https://doi.org/10.1063/1.362533
Publikováno v:
Solar Energy Materials and Solar Cells. 34:393-400
In this work, the accurate light-generation model which accounts for the wave nature of light is compared to the classical model which assumes the simple exponential decay of absorbed light and considers only the two most important reflections. Both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::089f94e37219709c3d203a8a52e30b1d
https://doi.org/10.1016/0927-0248(94)90065-5
https://doi.org/10.1016/0927-0248(94)90065-5
Publikováno v:
Solar Energy Materials and Solar Cells. 34:385-392
A simulation model of amorphous silicon solar cells ASPIN has been extended to incorporate the material properties of the TCO/a-Si:C:H interface region, which plays an important role in p-i-n a-Si:H solar cells and can strongly influence their photoe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a4be3df874bb555685ec37f8afe78f
https://doi.org/10.1016/0927-0248(94)90064-7
https://doi.org/10.1016/0927-0248(94)90064-7
Publikováno v:
Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering'.
It is shown that the design considerations for c-Si (crystalline silicon) solar cells greatly differ from those for a-Si (amorphous silicon) cells. Due to inherent atomic disorder, the a-Si material has a large and continuous distribution of gap stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::727a25c382524fdc41487a25e22f7406
https://doi.org/10.1109/melcon.1989.49996
https://doi.org/10.1109/melcon.1989.49996
Publikováno v:
Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering'.
Results of a computer analysis of a p-i-n structure a-Si:H solar cell for different impurity gradients of p-i transitions and for various added acceptor and donor impurities in the i-layer are presented. It was found that the impurity gradient of a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a219f4ad7ea3d3b128f5528a9ef779d5
https://doi.org/10.1109/melcon.1989.49995
https://doi.org/10.1109/melcon.1989.49995