Zobrazeno 1 - 5
of 5
pro vyhledávání: '"João Marcelo Jordão Lopes"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 242:157-160
Sn nanoclusters are synthesized in 180 nm SiO2 layer after ion implantation and heat treatments in the 400–1100 °C temperature range. The distribution and coarsening of nanoclusters is characterized by Rutherford backscattering spectrometry and tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b14d77dc9f78bdf1ed53e9abced572eb
https://doi.org/10.1016/j.nimb.2005.08.013
https://doi.org/10.1016/j.nimb.2005.08.013
Autor:
F.C. Zawislak, Lars Rebohle, Wolfgang Skorupa, Moni Behar, João Marcelo Jordão Lopes, Paulo Fernando Papaleo Fichtner
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 218:438-443
180 nm thick SiO2 layers thermally grown on crystalline Si were irradiated with He+, Si+, Kr++ and Au+ ions transferring different amounts of electronic (Se) and nuclear (Sn) energy to the film. After the irradiation, the SiO2 layers were implanted w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::410a75f84c212b6929e8c4b21e772ab3
https://doi.org/10.1016/j.nimb.2003.12.025
https://doi.org/10.1016/j.nimb.2003.12.025
Autor:
Wolfgang Skorupa, Moni Behar, F.C. Zawislak, João Marcelo Jordão Lopes, Lars Rebohle, Paulo Fernando Papaleo Fichtner
Publikováno v:
Scopus-Elsevier
180 nm thick SiO2 films produced by wet oxidation of (100) Si wafers were implanted at room temperature with 120 keV Ge+ ions at a fluence of 1.2×10 cm-2 in order to allow the formation of Ge nanoparticles upon post implantation thermal annealings w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8dc853ebcb8b468326946d7bb0ad642
https://doi.org/10.1557/proc-744-m8.28
https://doi.org/10.1557/proc-744-m8.28
Autor:
C. E. Foerster, Carlos Maurício Lepienski, Francisco C. Serbena, F.C. Zawislak, João Marcelo Jordão Lopes
Publikováno v:
Scopus-Elsevier
The nanoindentation technique was used to determine the hardness and Young’s modulus of thin C60 films irradiated with N ions. The pristine film, with thickness of 170 nm, was grown on a Si (111) substrate, with an intermediary layer of SiO2 50nm t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1b5b89ee21772aec90bdfb15b8ed96f
https://doi.org/10.1557/proc-522-299
https://doi.org/10.1557/proc-522-299
Autor:
João Marcelo Jordão Lopes, Paulo Fernando Papaleo Fichtner, Adriana M. Condó, Francisco C. Lovey, F.C. Zawislak
Publikováno v:
Applied Physics Letters. 86:023101
Sn nanoclusters are synthesized in 180 nm SiO2 layers after ion implantation and heat treatment. Annealings in N2 ambient at high temperatures (T⩾700°C) lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f06c42cd71c198b74690017c2e9b09
https://doi.org/10.1063/1.1849855
https://doi.org/10.1063/1.1849855