Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Jnawali, Giriraj"'
Autor:
Brand, Christian, Hucht, Alfred, Mehdipour, Hamid, Jnawali, Giriraj, Fortmann, Jonas D., Tajik, Mohammad, Hild, Rüdiger, Sothmann, Björn, Kratzer, Peter, Schützhold, Ralf, Hoegen, Michael Horn-von
The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy ele
Externí odkaz:
http://arxiv.org/abs/2310.10488
Autor:
Brand, Christian, Hucht, Alfred, Jnawali, Giriraj, Fortmann, Jonas D., Sothmann, Björn, Mehdipour, Hamid, Kratzer, Peter, Schützhold, Ralf, Hoegen, Michael Horn-von
The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as
Externí odkaz:
http://arxiv.org/abs/2302.01715
The ternary van der Waals material NbIrTe$_4$ is a Type-II Weyl semimetal. We use a tunable circularly polarized mid-infrared laser to investigate the existence of band-to-band excitations using transient reflectivity in an exfoliated nanoflake and p
Externí odkaz:
http://arxiv.org/abs/2112.14814
Autor:
Pournia, Seyyedesadaf, Jnawali, Giriraj, Need, Ryan F., Jackson, Howard E., Wilson, Stephen D., Smith, Leigh M.
Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated thick (~1
Externí odkaz:
http://arxiv.org/abs/2110.10799
Autor:
Jnawali, Giriraj, Pournia, Seyyedesadaf, Zoghlin, Eli, Shojaei, Iraj Abbasian, Wilson, Stephen D., Gayles, Jacob, Smith, Leigh M.
Magnetic layered ternary chalcogenides hold great promise for future spin-optoelectronic devices in the two dimensional limit. Understanding how the properties of the materials are impacted by magnetic ordering and the spin-orbit interactions is crit
Externí odkaz:
http://arxiv.org/abs/2109.13440
Autor:
Shojaei, Iraj Abbasian, Pournia, Seyyedesadaf, Le, Congcong, Ortiz, Brenden R., Jnawali, Giriraj, Zhang, Fu-Chun, Wilson, Stephen D., Jackson, Howard E., Smith, Leigh M.
The semimetal NbIrTe4 has been proposed to be a Type-II Weyl semimetal with 8 pairs of opposite Chirality Weyl nodes which are very close to the Fermi energy. This topological electronic structure is made possible because of the broken inversion symm
Externí odkaz:
http://arxiv.org/abs/2011.10848
Autor:
Jnawali, Giriraj, Xiang, Yuan, Linser, Samuel M., Shojaei, Iraj Abbasian, Wang, Ruoxing, Qiu, Gang, Lian, Chao, Wong, Bryan M., Wenzhuo, Wu, Ye, Peide D., Leng, Yongsheng, Jackson, Howard E., Smith, Leigh M.
Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, resulting in complex band structures with Weyl crossings and unique spin textures. Detailed time-resolved polarized reflectance spectroscopy is used to
Externí odkaz:
http://arxiv.org/abs/1910.10306
Autor:
Pournia, Seyyedesadaf, Linser, Samuel, Jnawali, Giriraj, Jackson, Howard E., Smith, Leigh M., Ameruddin, Amira, Caroff, Philippe, Wong-Leung, Jennifer, Tan, Hark Hoe, Jagadish, Chennupati, Joyce, Hannah J.
Publikováno v:
Nano Research 2020
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with
Externí odkaz:
http://arxiv.org/abs/1909.07488
Autor:
Shojaei, Iraj Abbasian, Linser, Samuel, Jnawali, Giriraj, Wickramasuriya, N., Jackson, Howard E., Smith, Leigh M., Kargar, Fariborz, Balandin, Alexander A., Yuan, Xiaoming, Caroff, Philip, Tan, H. Hoe, Jagadish, Chennupati
Publikováno v:
Nano Letters 19, 5062-5069 (2019)
We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in single bare GaAsSb nanowires which do not show substantial hot carrier
Externí odkaz:
http://arxiv.org/abs/1810.12516
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