Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jjm Thieu Kwaspen"'
Autor:
Bram Hoex, M.C.J.C.M. Krämer, MK Meint Smit, Johan Hendrik Klootwijk, A Grzegorczyk, Wmm Erwin Kessels, P.R. Hageman, F Fouad Karouta, Jjm Thieu Kwaspen, EC Timmering
Publikováno v:
ECS Transactions. 16:181-191
We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f233df736290913bee1c18d083191986
https://doi.org/10.1149/1.2983174
https://doi.org/10.1149/1.2983174
Publikováno v:
Journal of Vacuum Science and Technology, B, 13, 2245-2249. AVS Science and Technology Society
The influence of in situ argon cleaning of GaAs on the electrical characteristics of Schottky diodes and metal–semiconductor field-effect transistors (MESFETs) is investigated. The beam energy was varied from 50 to 500 eV and the characteristics we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3919e83a599d2f9cbafdc7f79f5dca04
https://doi.org/10.1116/1.588057
https://doi.org/10.1116/1.588057
Autor:
MK Meint Smit, Eajm Erwin Bente, Jjm Thieu Kwaspen, Mahmoud Nikoufard, Xjm Xaveer Leijtens, YC Youcai Zhu
Publikováno v:
Optical Amplifiers and Their Applications/Integrated Photonics Research.
In this paper, we present an eight-channel polarization independent multiwavelength receiver which comprises an AWG demultiplexer monolithically integrated with eight twin-waveguide pin-photodetectors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3dae622a3a6503c9359f5a36f06659c
https://doi.org/10.1364/ipr.2004.ithb2
https://doi.org/10.1364/ipr.2004.ithb2
Publikováno v:
Electronics Letters, 33(19), 1657-1658. Institution of Engineering and Technology (IET)
The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c3304d7e890395c3ed1b4143c8374b3
https://doi.org/10.1049/el:19971107
https://doi.org/10.1049/el:19971107