Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jizuo Zhang"'
Publikováno v:
IEEE Access, Vol 7, Pp 149255-149261 (2019)
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the substrate noise, which can lead to changes in effect of single event transient (SET). In outer space, collision of cosmic energetic particles with sensitive node
Externí odkaz:
https://doaj.org/article/ef90701d9a2040d392fa850c26dd764e
Publikováno v:
Symmetry, Vol 11, Iss 2, p 154 (2019)
In a triple-well NMOSFET, a deep n+ well (DNW) is buried in the substrate to isolate the substrate noise. The presence of this deep n+ well leads to changes in single-event transient effects compared to bulk NMOSFET. In space, a single cosmic particl
Externí odkaz:
https://doaj.org/article/c36d4d53c28c4f76bc436c953da013d6
Publikováno v:
IEEE Access. 7:149255-149261
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the substrate noise, which can lead to changes in effect of single event transient (SET). In outer space, collision of cosmic energetic particles with sensitive node
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::206188920029200a0b297cd293c50f23
https://doi.org/10.1109/access.2019.2946213
https://doi.org/10.1109/access.2019.2946213
Publikováno v:
Microelectronics Reliability. 91:278-282
The extreme reduction in minimum transistor-to-transistor spacing has resulted in multiple transistors being often affected by a single ion strike. The charge sharing becomes a prevalent phenomenon, and it usually brings about single-event multiple t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85bd029dcfd6619b0f9c441a65a3d1c7
https://doi.org/10.1016/j.microrel.2018.10.015
https://doi.org/10.1016/j.microrel.2018.10.015
Publikováno v:
Communications in Computer and Information Science ISBN: 9789811359187
On account of finite channel bandwidth and reflection, receiver cannot receive data accurately resulting from ISI. To satisfy the transmission requirements of PCIE3.1 and Rapid IO3.2, this paper presents a 12.5 Gb/s equalizer based on 40 nm CMOS. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4723530a2a3b5f6aedf1e3cfef5b277b
https://doi.org/10.1007/978-981-13-5919-4_10
https://doi.org/10.1007/978-981-13-5919-4_10
Publikováno v:
2018 10th International Conference on Communications, Circuits and Systems (ICCCAS).
This paper put forward a 12-b 25MS/s Successive Approximation Register Analog-to-Digital Converter (SAR ADC) architecture based on power efficiency Capacitive Digital-to-Analog (CDAC) and a two stages amplifier full-scale differential dynamic compara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374ab4254df738d2bd60950d7e2e386d
https://doi.org/10.1109/icccas.2018.8769189
https://doi.org/10.1109/icccas.2018.8769189
Publikováno v:
Science China Information Sciences. 62
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37a2fc8276d6c543439f48313735a0f7
https://doi.org/10.1007/s11432-017-9549-8
https://doi.org/10.1007/s11432-017-9549-8
Publikováno v:
Symmetry
Volume 11
Issue 2
Symmetry, Vol 11, Iss 2, p 154 (2019)
Volume 11
Issue 2
Symmetry, Vol 11, Iss 2, p 154 (2019)
In a triple-well NMOSFET, a deep n+ well (DNW) is buried in the substrate to isolate the substrate noise. The presence of this deep n+ well leads to changes in single-event transient effects compared to bulk NMOSFET. In space, a single cosmic particl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cce3072961ec0cd55a8c0f6f40110729
https://doi.org/10.3390/sym11020154
https://doi.org/10.3390/sym11020154
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
A multiloop method is presented for highly nonlinear ring oscillators in this paper. This circuit permits lower tuning gain through the use of coarse/fine frequency control, which also translates into a lower sensitivity to the voltage at the control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::126bd95f29554d8b89569604b87a4b98
https://doi.org/10.1109/icsict.2010.5667842
https://doi.org/10.1109/icsict.2010.5667842
Publikováno v:
2010 10th IEEE International Conference on Solid-State & Integrated Circuit Technology (ICSICT); 2010, p99-101, 3p