Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Jiyeon Ma"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 512-516 (2019)
We report on the effect of Al2O3 surface passivation on electrical properties of beta-gallium oxide (β-Ga2O3) nanomembrane field-effect transistor (FET). The fabricated bottom-gate β -Ga2O3(100) FET exhibits enhanced channel conductance and reduced
Externí odkaz:
https://doaj.org/article/e6be4d82d2504d24bb50af5ba87c05ef
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1124-1128 (2018)
In this paper, we report on the electrical and thermal instability of β-Ga2O3 nanomembrane field-effect transistor with a bottom-gate configuration. The fabricated device exhibits high electrical performance of field-effect mobility of up to 60.9 cm
Externí odkaz:
https://doaj.org/article/09857a1b75794f68ad96ebc7858e4593
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 494 (2021)
Interface traps between a gate insulator and beta-gallium oxide (β-Ga2O3) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature
Externí odkaz:
https://doaj.org/article/d84407040c0942c28ac35bc7b05e4878
Publikováno v:
IEEE Transactions on Electron Devices. 68:1011-1015
We report the comparison of the atomic layer deposited polycrystalline (p-)/amorphous (a-) HfO2 bilayer gate dielectric with p-HfO2/a-Al2O3 for enhanced $\beta $ -Ga2O3 metal oxide semiconductor capacitors (MOSCAPs). A discrepancy in the temperature-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ba9f81b44b90c23b5e25b10ad0f64e0
https://doi.org/10.1109/ted.2021.3053189
https://doi.org/10.1109/ted.2021.3053189
Autor:
OukJae Lee, Jiyeon Ma, Kyusang Lee, Qiubao Lin, Doeon Lee, Junseok Heo, Geonwook Yoo, Jungho Ahn, Youngseo Park, Sangwan Sim
Publikováno v:
ACS Photonics. 8:557-566
Deep-ultraviolet (DUV) photodetectors based on wide-band-gap semiconductors have attracted significant interest across a wide range of applications in the industrial, biological, environmental, and...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ffac3ad2fb6be7ba39ffe74db17083
https://doi.org/10.1021/acsphotonics.0c01579
https://doi.org/10.1021/acsphotonics.0c01579
Publikováno v:
Journal of the Korean Physical Society. 77:317-322
A Sentaurus TCAD 2-D model of β-Ga2O3 metal-oxide semiconductor field-effect transistors (MOSFETs) with a polycrystalline HfO2 gate-oxide deposited using atomic layer deposition (ALD), which has a semiconductor-on-insulator (SOI) structure, is devel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b9d15559ab2de8e8a6041678cda6ee
https://doi.org/10.3938/jkps.77.317
https://doi.org/10.3938/jkps.77.317
Autor:
Geonwook Yoo, Jiyeon Ma
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:516-519
We fabricate top-gate β-Ga₂O₃ nanomembrane metal-semiconductor field-effect transistor (MESFET) using a mechanical exfoliation method, and investigate its electrical performance. The Schottky contact between top-gate metal and β-Ga₂O₃ (100)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d70421c2aaf3dbb2b5d2f7c57527465a
https://doi.org/10.1166/jnn.2020.17259
https://doi.org/10.1166/jnn.2020.17259
Autor:
Geonwook Yoo, Jiyeon Ma
Publikováno v:
IEEE Electron Device Letters. 40:1317-1320
We demonstrate low subthreshold swing (SS) double-gate (DG) $\beta $ -Ga2O3 field-effect transistors (FETs) with polycrystalline hafnium oxide (HfO2) gate dielectrics. The atomic layer deposited HfO2 layer at an elevated temperature of 350 °C withou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25aa837df6010047ce74e894e32d47b1
https://doi.org/10.1109/led.2019.2924680
https://doi.org/10.1109/led.2019.2924680
Publikováno v:
Nanomaterials
Nanomaterials, Vol 11, Iss 494, p 494 (2021)
Volume 11
Issue 2
Nanomaterials, Vol 11, Iss 494, p 494 (2021)
Volume 11
Issue 2
Interface traps between a gate insulator and beta-gallium oxide (β-Ga2O3) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5d22d4f4eed2694c399f50d315c0532
http://europepmc.org/articles/PMC7920063
http://europepmc.org/articles/PMC7920063
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 512-516 (2019)
We report on the effect of Al2O3 surface passivation on electrical properties of beta-gallium oxide (β-Ga2O3) nanomembrane field-effect transistor (FET). The fabricated bottom-gate β -Ga2O3(100) FET exhibits enhanced channel conductance and reduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60b6e233baaac66143d86049ea4e4389
https://doi.org/10.1109/jeds.2019.2912186
https://doi.org/10.1109/jeds.2019.2912186