Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Jixia Dai"'
Autor:
Wenhan Zhang, Weida Wu, Xueyun Wang, Jixia Dai, Mingxing Chen, Sang-Wook Cheong, Zhicheng Zhong
Publikováno v:
Nano Letters. 18:2677-2682
Topological insulators are a class of band insulators with non-trivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the spin-orbit coupli
Autor:
Jixia Dai, Weida Wu, Nikesh Koirala, Wenbo Wang, Maryam Salehi, Matthew Brahlek, Seongshik Oh
Publikováno v:
Nano Research. 8:1222-1228
High quality thin films of topological insulators (TI) such as Bi2Se3 have been successfully synthesized by molecular beam epitaxy (MBE). Although the surface of MBE films can be protected by capping with inert materials such as amorphous Se, restori
Autor:
Yazhong Wang, Daniel Kwok, Weida Wu, Xueyun Wang, Sang-Wook Cheong, Jixia Dai, Shengbai Zhang, Damien West
Publikováno v:
Physical Review Letters. 117
Combining high resolution scanning tunneling microscopy and first principles calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects, that are responsible for the bulk conduction and nanoscale
Autor:
Jixia, Dai, Damien, West, Xueyun, Wang, Yazhong, Wang, Daniel, Kwok, S-W, Cheong, S B, Zhang, Weida, Wu
Publikováno v:
Physical review letters. 117(10)
Combining high resolution scanning tunneling microscopy and first principles calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects, that are responsible for the bulk conduction and nanoscale
Autor:
Myung-Geun Han, Thomas Nummy, Daniel Dessau, Maryam Salehi, N. Peter Armitage, Weida Wu, Jisoo Moon, Jixia Dai, Liang Wu, Nikesh Koirala, Justin Waugh, Seongshik Oh, Yimei Zhu, Matthew Brahlek
Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus makin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8cc5640961a71e34679b3b42386c080
Publikováno v:
Physical Review B. 90
Layered $5d$ transition metal dichalcogenide (TMD) $\mathrm{IrT}{\mathrm{e}}_{2}$ is distinguished from the traditional TMDs (such as $\mathrm{NbS}{\mathrm{e}}_{2})$ by the existence of multiple charge-density wave (CDW)-like stripe phases and superc
Publikováno v:
Physical Review B. 90
We present scanning tunneling microscopy and spectroscopy experiments on the novel ${J}_{\mathrm{eff}}=1/2$ Mott insulator ${\mathrm{Sr}}_{2}\mathrm{Ir}{\mathrm{O}}_{4}$. Local density of states (LDOS) measurements show an intrinsic insulating gap of
We demonstrate a general, computer automated procedure that inverts the reciprocal space scattering data (q-space) that are measured by spectroscopic imaging scanning tunnelling microscopy (SI-STM) in order to determine the momentum space (k-space) s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8bdf7127a4f654c555c17f902c4d866
http://arxiv.org/abs/1302.5670
http://arxiv.org/abs/1302.5670
Autor:
Wenhan Zhang, Mingxing Chen, Jixia Dai, Xueyun Wang, Zhicheng Zhong, Sang-Wook Cheong, Weida Wu
Publikováno v:
Nano Letters; 4/11/2018, Vol. 18 Issue 4, p2677-2682, 6p
Autor:
Koirala, Nikesh, Brahlek, Matthew, Salehi, Maryam, Liang Wu, Jixia Dai, Justin Waugh, Nummy, Thomas, Han, Myung-Geun, Jisoo Moon, Yimei Zhu, Dessau, Daniel, Weida Wu, Armitage, N. Peter, Seongshik Oh
Publikováno v:
Nano Letters; Dec2015, Vol. 15 Issue 12, p8245-8249, 5p