Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jiwoong Baek"'
Publikováno v:
Journal of the Korean Society for Aeronautical & Space Sciences. 51:315-321
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1281829fd18e33a72617f07fa959db9d
https://doi.org/10.5139/jksas.2023.51.5.315
https://doi.org/10.5139/jksas.2023.51.5.315
Publikováno v:
The Journal Of Korean Association of Maxillofacial Plastic and Reconstructive Surgeons. 35:408-411
After radical excision of a tumor in the maxillofacial area, functional and esthetic reconstruction is needed, including flap surgery. Among the many etiologies of flap failure, venous thrombosis is one of the most frequent. Heparin is used routinely
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e99e3769bfb8f749b1321d01afbed087
https://doi.org/10.14402/jkamprs.2013.35.6.408
https://doi.org/10.14402/jkamprs.2013.35.6.408
Publikováno v:
2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR).
Tensile strain of Ge-on-Si with post-growth annealing was analyzed using micro-Raman for optical sources in interconnection system. Tensile Stain in epi-Ge distributed non-linearly with SiGe alloy formation at the interface after annealing.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce84c55203d325eb45ec87610ec555de
https://doi.org/10.1109/cleopr.2015.7375928
https://doi.org/10.1109/cleopr.2015.7375928
Publikováno v:
OPTICAL MATERIALS EXPRESS(6): 9
We investigated the optical, electrical, and structural properties of epitaxially grown Ge-on-Si substrates after phosphorous implantation. Ion implantation increases n-type doping in Ge for an on-chip light source. However, its effects on Ge should
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07f118c9f5c31f5c677e3d2e7cec7c2b
https://doi.org/10.1364/ome.6.002939
https://doi.org/10.1364/ome.6.002939