Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jiunn-Ren Huang"'
Autor:
Chi-fa Ku, Paul P.W. Yen, Cheng Yu Fang, Kuei-Chun Hung, Jiunn-Ren Huang, I-Hsiung Huang, Ching-Hsu Chang, Yeong-Song Yen
Publikováno v:
SPIE Proceedings.
A multiple exposure with matching illumination settings has been applied to the advanced photo process. We combine some special illumination settings which are good for each specific duty ratio and produce a good through-pitch performance. For exampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e6dc4313fee2888255fc1930d4ba369
https://doi.org/10.1117/12.474540
https://doi.org/10.1117/12.474540
Autor:
Jiunn-Ren Huang, Paul P.W. Yen, Kuei-Chun Hung, Yeong-Song Yen, Benjamin Szu-Min Lin, Cheng Yu Fang, Hua-Yu Liu, Shu-Hao Hsu, Z. H. Huang
Publikováno v:
SPIE Proceedings.
An extended 248nm lithography process with alternating phase-shift masks (PSMs) and etch-trimming techniques has produced 50nm gate critical dimensions (CDs). Well-controlled CD uniformity and line-end edge roughness (LER) are also demonstrated in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e858737af5f40eded3163663ea9ea715
https://doi.org/10.1117/12.474238
https://doi.org/10.1117/12.474238
Publikováno v:
SPIE Proceedings.
Poly-gate critical dimension (CD) control has become a major concern as technology advances towards the 130nm node. The presence of optical proximity and plasma microloading effects in today's IC fabrication has a severe impact on through-pitch CD un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e76477d444af3032cb6b337ff75820a3
https://doi.org/10.1117/12.473429
https://doi.org/10.1117/12.473429
Publikováno v:
SPIE Proceedings.
A novel multiple resist patterning stacks (MURPAS) method has been applied on the copper, low-k dual damascene interconnection. Trench resist structures are directly patterned on the top of via resist layer without the resist interface intermixing us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::811806fbf578dd874aebb6ea40abfb70
https://doi.org/10.1117/12.435727
https://doi.org/10.1117/12.435727