Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Jiuning Hu"'
Autor:
Dinesh Patel, Martina Marzano, Chieh-I Liu, Heather M. Hill, Mattias Kruskopf, Hanbyul Jin, Jiuning Hu, David B. Newell, Chi-Te Liang, Randolph Elmquist, Albert F. Rigosi
Publikováno v:
AIP Advances, Vol 10, Iss 2, Pp 025112-025112-6 (2020)
The utilization of multiple current terminals on millimeter-scale graphene p–n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the ν = 2 plateau (RH ≈ 12 906 Ω). These frac
Externí odkaz:
https://doaj.org/article/007325826f0040ddaabfeb49bf6d57fe
Autor:
Albert F. Rigosi, Chieh-I Liu, Bi Yi Wu, Hsin-Yen Lee, Mattias Kruskopf, Yanfei Yang, Heather M. Hill, Jiuning Hu, Emily G. Bittle, Jan Obrzut, Angela R. Hight Walker, Randolph E. Elmquist, David B. Newell
Publikováno v:
Data in Brief, Vol 20, Iss , Pp 1201-1208 (2018)
The information provided in this data article will cover the growth parameters for monolayer, epitaxial graphene, as well as how to verify the layer homogeneity by confocal laser scanning and optical microscopy. The characterization of the subsequent
Externí odkaz:
https://doaj.org/article/0fbfa92891c54c488204d48448d628ce
Autor:
Albert F. Rigosi, Chieh-I Liu, Nicholas R. Glavin, Yanfei Yang, Heather M. Hill, Jiuning Hu, Angela R. Hight Walker, Curt A. Richter, Randolph E. Elmquist, David B. Newell
Publikováno v:
ACS Omega, Vol 2, Iss 5, Pp 2326-2332 (2017)
Externí odkaz:
https://doaj.org/article/13f3ccf235a04bbbb47315356bf48702
Autor:
Jiuning Hu, Chris Spence, Kurt Wampler, Mahmoud Mohsen, Yen-Wen Lu, Rachit Gupta, Youping Zhang, Rafael Howell, Jun Ye
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebe8f6dc12c5688febe4e5833d201c7e
https://doi.org/10.1117/12.2658649
https://doi.org/10.1117/12.2658649
Autor:
Guangjun Cheng, Bi-Yi Wu, Takashi Taniguchi, David B. Newell, Hanbyul Jin, Mattias Kruskopf, Randolph E. Elmquist, Albert F. Rigosi, Chi-Te Liang, Vishal Panchal, Jiuning Hu, Kenji Watanabe, Hsin-Yen Lee, Yanfei Yang
Publikováno v:
ACS Applied Electronic Materials. 2:204-212
Graphene ribbons, which may be fabricated by a wide variety of experimental techniques such as chemical processing, unzipping or etching of carbon nanotubes, molecular precursors, ion implantation,...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de109fb41eccdbbb094ec07aefcf81a0
https://doi.org/10.1021/acsaelm.9b00696
https://doi.org/10.1021/acsaelm.9b00696
Autor:
Bin Cao, Tobias Grass, Olivier Gazzano, Kishan Ashokbhai Patel, Jiuning Hu, Markus Müller, Tobias Huber-Loyola, Luca Anzi, Kenji Watanabe, Takashi Taniguchi, David B. Newell, Michael Gullans, Roman Sordan, Mohammad Hafezi, Glenn S. Solomon
Photocurrent (PC) measurements can reveal the relaxation dynamics of photo-excited hot carriers beyond the linear response of conventional transport experiments, a regime important for carrier multiplication. In graphene subject to a magnetic field,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ad21ed37411e400eeb723b2c2c5bb72
http://arxiv.org/abs/2110.01079
http://arxiv.org/abs/2110.01079
Publikováno v:
Physical review. B
Hu, J, Rigosi, A F, Newell, D B & Chen, Y P 2020, ' Thermoelectric transport in coupled double layers with interlayer excitons and exciton condensation ', Physical Review B, vol. 102, no. 23, 235304 . https://doi.org/10.1103/PhysRevB.102.235304
Hu, J, Rigosi, A F, Newell, D B & Chen, Y P 2020, ' Thermoelectric transport in coupled double layers with interlayer excitons and exciton condensation ', Physical Review B, vol. 102, no. 23, 235304 . https://doi.org/10.1103/PhysRevB.102.235304
Quantum Boltzmann formalism is employed to study the transport properties of strongly-coupled double layer systems that enable the formation of interlayer excitons and exciton condensation. The importance of exciton formation, dissociation, and conde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04924dd60165b3a5a2e85314a8b8e539
https://doi.org/10.1103/physrevb.102.235304
https://doi.org/10.1103/physrevb.102.235304
Autor:
C. S. Ting, Ziqiang Wang, Jiaxin Yin, Jian Li, Zheng Wu, Chenglin Zhang, Xianxin Wu, Xiongjun Wang, Jiuning Hu, X. J. Liang, J. H. Wang, Pengcheng Dai, Hong Ding, Shuheng H. Pan, G. F. Chen, Pei-Herng Hor, Chiming Jin, Ang Li
Publikováno v:
Physical Review B. 102
We use scanning tunneling microscopy/spectroscopy to elucidate the Cooper pairing of the iron pnictide superconductor ${\mathrm{Ba}}_{0.6}{\mathrm{K}}_{0.4}{\mathrm{Fe}}_{2}{\mathrm{As}}_{2}$. By a cold-cleaving technique, we obtain atomically resolv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb2dfe906296e4749d3c5ce924b285ed
https://doi.org/10.1103/physrevb.102.054515
https://doi.org/10.1103/physrevb.102.054515
Autor:
Angela R. Hight Walker, Martina Marzano, Albert F. Rigosi, Hanbyul Jin, Luca Callegaro, Mattias Kruskopf, Chi-Te Liang, Jiuning Hu, Massimo Ortolano, David B. Newell, Heather M. Hill, Dinesh K. Patel
Publikováno v:
Carbon. 154
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene p-n junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::043d61c4d13905fa26dc9be9bc84faed
https://pubmed.ncbi.nlm.nih.gov/32165760
https://pubmed.ncbi.nlm.nih.gov/32165760
Autor:
Randolph E. Elmquist, Kenji Watanabe, Alireza R. Panna, Hsin-Yen Lee, Yanfei Yang, George R. Jones, David B. Newell, Takashi Taniguchi, Jiuning Hu, Shamith U. Payagala, Dean G. Jarrett, Mattias Kruskopf, Albert F. Rigosi, Bi-Yi Wu, Jifa Tian, Marlin E. Kraft
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-11 (2018)
Scientific Reports
Scientific Reports
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92cbeebe6de742d7b742d7e6c405c5b4
http://link.springer.com/article/10.1038/s41598-018-33466-z
http://link.springer.com/article/10.1038/s41598-018-33466-z