Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Jiun-Jye Chang"'
Autor:
Jiun-Jye Chang, 張鈞傑
87
Trench gate power MOSFET is the most popular product recently. It is due to the advantages of low switching loss and easy driver circuit design. Furthermore, the on-resistance of trench capacitor is reduced by the development of semiconductor
Trench gate power MOSFET is the most popular product recently. It is due to the advantages of low switching loss and easy driver circuit design. Furthermore, the on-resistance of trench capacitor is reduced by the development of semiconductor
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/57946640123049504005
Autor:
Chung Chang, Wen-bin Hsu, Jiun-Jye Chang, Jen-Pei Tseng, Yu-Chieh Lin, Zao-Shi Zheng, An-thung Cho
Publikováno v:
SID Symposium Digest of Technical Papers. 44:1066-1069
We report the controllable UV-Visible nano-Si photonic sensor, band-gap spectrum engineering, and integrated in TFT technology as Image-scan/Fingerprint panel. Photonic Sensor using nano-Si as sensitizer sandwiched between two electrodes structure is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1a4c4594ffe606bf4d8f70ca8fe312a
https://doi.org/10.1002/j.2168-0159.2013.tb06408.x
https://doi.org/10.1002/j.2168-0159.2013.tb06408.x
Publikováno v:
IEEE Transactions on Electron Devices. 59:3543-3548
The plasma process-induced damage (PPID) of low-temperature polycrystalline-silicon (LTPS) thin-film transistors (TFTs) (LTPS TFTs) during metal gate manufacturing is studied in this work. Different metal gate architecture configurations were designe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b4c8ac08e0c9cd87969dc86216860f
https://doi.org/10.1109/ted.2012.2219053
https://doi.org/10.1109/ted.2012.2219053
Autor:
Tien-Ko Wang, Jen-Pei Tseng, Yung-Chun Wu, Yu-Mou Chen, Chia-Yu Chen, Kuei-Shu Chang-Liao, Kao-Chao Lin, Jiun-Jye Chang, Min-Feng Hung
Publikováno v:
IEEE Transactions on Electron Devices. 58:2448-2455
The plasma-process-induced damage (PPID) of low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) during the etching of the poly-Si film was investigated in this paper. The results reveal the relationship between the device d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::009bbc8c1ef09a511fafd636f2530cfe
https://doi.org/10.1109/ted.2011.2153855
https://doi.org/10.1109/ted.2011.2153855
Autor:
Chun-Huai Li, Ming-Hung Chung, Jiun-Jye Chang, Chung-Hong Kuo, An-Thung Cho, Wei-lung Liao, Ming-Feng Chiang, Chi-Wen Fan, Yu-Min Lee, Tien-Hao Chang, Wei-Peng Weng
Publikováno v:
SID Symposium Digest of Technical Papers. 42:1818-1821
We report the controllable UV-Visible-to-NIR Si-nanocrystals photonic sensor, photo-spectrum band-gap engineering technology, and integrated in TFT-LCD as multi-function intelligent display. Photonic Sensor using Si-nanocrystals as sensitizer sandwic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba00e08e98637b6c0601016d90afe54c
https://doi.org/10.1889/1.3621252
https://doi.org/10.1889/1.3621252
Publikováno v:
IEEE Electron Device Letters. 34:75-77
A polycrystalline silicon (poly-Si) channel twin thin-film transistor (twin-TFT) nonvolatile memory (NVM) device with In-Ga-Zn-Ox (IGZO) as a storage layer is demonstrated. IGZO-FG twin-TFT NVM exhibits a large memory window ΔVth. A VCG at 18 V for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45eb6d0eebd58659d360fe48ca2b106d
https://doi.org/10.1109/led.2012.2226232
https://doi.org/10.1109/led.2012.2226232
Autor:
Jiun-Jye Chang, Ming-Feng Chiang, Wei‐Cheng Wu, Jen-Pei Tseng, Jhan Ren-Hong, Chun‐Hao Tu, Ting-Chun Lin, Hsiao Ya-Zhi, Kung Kuo-Sen, Wei‐Lung Liau
Publikováno v:
SID Symposium Digest of Technical Papers. 43:1148-1150
The unplugged electronic display were fabricated and investigated in this study. The electro phoretic display (EPD) and solar cell device were laminated as an ultra thin structure, leading to a flexible, light and unbroken characteristics. Also, surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c826672e63436fee1a9815bd4198ff79
https://doi.org/10.1002/j.2168-0159.2012.tb05998.x
https://doi.org/10.1002/j.2168-0159.2012.tb05998.x
Autor:
Wei-lung Liao, Ming-Feng Chiang, Chun-Hao Tu, Ming-Chin Hung, Wei-Ting Lin, Jiun-Jye Chang, Chia-Hsiang Chen
Publikováno v:
SID Symposium Digest of Technical Papers. 42:1151-1153
The behaviors of dynamic gate bias stress for Indium-Gallium-Zinc-Oxide (IGZO) TFTs were investigated in this study. The device after storage represents a parasitic traneffect after positive gate bias stress. Furthermore, the stability of IGZO TFTs c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c614718333445d90b220a29c6a795de8
https://doi.org/10.1889/1.3621028
https://doi.org/10.1889/1.3621028
Autor:
C. F. Lu, K. I. Ho, Chao-Sung Lai, An-Thung Cho, Chun Chang, Jiun-Jye Chang, Chao-Hung Chen, Ming-Feng Chiang
Publikováno v:
2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
Electrolyte-insulator-semiconductor (EIS) and Extended-gate Field Effect Transistor (EGFET) devices with programmable HfO2/Si3N4/SiO2 structures are demonstrated for pH detection. The proposed programmable EIS and EGFET sensors with pH sensing membra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed6c44495f3624c2a5bd989ddad5de9e
https://doi.org/10.1109/edssc.2013.6628174
https://doi.org/10.1109/edssc.2013.6628174
Autor:
Ming-Jang Lin, Jiun-Jye Chang, Huang-Chung Cheng, Chorng-Wei Liaw, Fang-Long Chang, Charles Ching-Hsiang Hsu
Publikováno v:
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
In respect of trench gate power devices, it is difficult to achieve satisfactory gate oxide leakage current, breakdown voltage and reliability characteristics. Trench etching process induced silicon surface damage, convex corner and contamination, wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88a8810cfe989a4e6250bfed4f0f8770
https://doi.org/10.1109/ispsd.2001.934629
https://doi.org/10.1109/ispsd.2001.934629