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pro vyhledávání: '"Jithin D. George"'
Autor:
Brianna N. Ruggiero, Kenzie M. Sanroman Gutierrez, Jithin D. George, Niall M. Mangan, Justin M. Notestein, Linsey C. Seitz
Publikováno v:
Journal of Catalysis. 414:33-43
Publikováno v:
SIAM Journal on Applied Mathematics. 79:2615-2638
A new method of solution is proposed for the solution of the wave equation in one space dimension with continuously varying coefficients. By considering all paths along which information arrives at...
Autor:
Zichao (Wendy) Di, Jithin D. George
Publikováno v:
Lecture Notes in Computer Science ISBN: 9783030504250
ICCS (5)
ICCS (5)
Simulating atomic evolution for the mechanics and structure of materials presents an ever-growing challenge due to the huge number of degrees of freedom borne from the high-dimensional spaces in which increasingly high-fidelity material models are de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::424aeeac81394dcd0f5f7b09c6410412
https://doi.org/10.1007/978-3-030-50426-7_13
https://doi.org/10.1007/978-3-030-50426-7_13
Publikováno v:
Wave Motion. 73:76-85
The sine–Gordonequation is a semilinear wave equation used to model many physical phenomenon like seismic events that includes earthquakes, slow slip and after-slip processes, dislocation in solids etc. Solution of homogeneous sine–Gordon equatio
The propagation of long waves onto a continental shelf is of great interest in tsunami modeling and other applications where understanding the amplification of waves during shoaling is important. When the linearized shallow water equations are solved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7a0a3eb8e332db38bab3d6fb7c2058f
http://arxiv.org/abs/1901.04148
http://arxiv.org/abs/1901.04148
Autor:
Jithin D. George, Ashish Saxena
Publikováno v:
2016 International Conference on Microelectronics, Computing and Communications (MicroCom).
Sensitivity depends upon the fabrication process adopted and the effective displacement of the dielectric layer, particularly for the case of a capacitance based sensor. In this scenario, patterning of the dielectric is adopted at a mass level in ord