Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jiten Sarathy"'
Autor:
Boris B. Stefanov, Ruomei Mu, Bryan S. Robinson, Jiten Sarathy, Erich P. Ippen, Shelby J. Savage, Hongsheng Wang, J. P. Wang, Scott A. Hamilton
Publikováno v:
Optics express. 16(5)
We present a novel characterization method for semiconductor optical amplifier Mach-Zehnder interferometer (SOA-MZI) switches which combines a pump-probe measurement with an interferometer bias scan. In addition to a wealth of information on the swit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0d180fa11ffe0956bbde74dcccdadf1
https://pubmed.ncbi.nlm.nih.gov/18542416
https://pubmed.ncbi.nlm.nih.gov/18542416
Autor:
Dong-Su Kim, Marshall J. Cohen, P.V. Studenkov, Jiten Sarathy, G. A. Gasparian, Michael J. Lange, Stephen R. Forrest, Gregory H. Olsen
Publikováno v:
SPIE Proceedings.
We present the preliminary results of our investigation into the demonstration of a 16 X 16 element 'active-pixel sensor' array for imaging in the 0.5-2.5 micrometers wavelength spectrum. Each pixel consists of an InGaAs photodiode integrated with In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0fabb70e425c4d628490c777bf1dabb
https://doi.org/10.1117/12.271193
https://doi.org/10.1117/12.271193
Publikováno v:
Quantum Optoelectronics.
The quantum confined Stark effect (QCSE) has been observed in quantum well structures of many different material systems, such as GaAs/AlGaAs [1]-[3] and InGaAs/InP [4]. Because of the steep rise at the absorption edge, coupled with the very high exc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b8b32154bce4f8bc85a672a1244a34
https://doi.org/10.1364/qo.1997.qthe.5
https://doi.org/10.1364/qo.1997.qthe.5
Publikováno v:
SPIE Proceedings.
We demonstrate a photodetector with a very narrow spectral linewidth (less than 2 angstroms) and a 35 angstroms tuning range is demonstrated. The absorption medium is made up of 3 pairs of InGaAs/GaAs Quantum Wells and the operating wavelength of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5427623fa15b6dbb61512772395c1b6f
https://doi.org/10.1117/12.238915
https://doi.org/10.1117/12.238915
Publikováno v:
Electronics Letters. 33:1498
Tunable resonant cavity enhanced photodetectors based on a GaInAsSb/AlGaAsSb multiple quantum well structure grown by molecular beam epitaxy have been successfiilly demonstrated. A tuning range of 20 nm is realised at 110 K with a reverse bias voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec81d9ef3bc59ae57402f184f6df0267
https://doi.org/10.1049/el:19970976
https://doi.org/10.1049/el:19970976
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