Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jit Chakraborty"'
Autor:
Swarnendu Maity, Mausumi Chattopadhyaya, Anusweta Roy, Rinki Bhowmick, Sabyasachi Sen, Tanmoy Dutta, Jit Chakraborty
Publikováno v:
Studies in Autonomic, Data-driven and Industrial Computing ISBN: 9789811673047
Studies in Autonomic, Data-driven and Industrial Computing
Studies in Autonomic, Data-driven and Industrial Computing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f12de1f0aee11ce42668dfcc1d6b242
https://doi.org/10.1007/978-981-16-7305-4_34
https://doi.org/10.1007/978-981-16-7305-4_34
Autor:
Rinki Bhowmick, Jit Chakraborty, Shankar Prasad Mitra, Ajit Biswas, Swarnendu Maiti, Tanmoy Dutta, Sayantanu Koley, Mausumi Chattopadhyaya, Sabyasachi Sen
Publikováno v:
Journal of Physics: Conference Series. 2286:012007
Herein we report variation in Tunnelling magneto resistance (TMR) of TM-porphyrin against increase in d electrons from n=1 to 8; as the transition metal changes across the periodic table from Sc to Ni. We observed that highest value of TMR is observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bee5bdf9752cf96d2dcd9f10d5debd90
https://doi.org/10.1088/1742-6596/2286/1/012007
https://doi.org/10.1088/1742-6596/2286/1/012007
Autor:
Sabyasachi Sen, Mausumi Chattopadhyaya, Swarnendu Maity, Sayantanu Koley, Arnab Basu, Anusweta Roy, Rinki Bhowmick, Jit Chakraborty
Publikováno v:
Journal of Physics: Conference Series. 1797:012047
In the present work, we report giant negative differential resistance action in probably the simplest molecular nanoelectronic device comprising of carbon chain placed between two ferromagnetic electrodes named as graphitic carbon nitride (g-C4N3). T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcfc4f2362765be25028607e2f2d357b
https://doi.org/10.1088/1742-6596/1797/1/012047
https://doi.org/10.1088/1742-6596/1797/1/012047
Autor:
Biswarup Neogi, Sayantanu Koley, Rinki Bhowmick, Jit Chakraborty, Mausumi Chattopadhyaya, Sabyasachi Sen, Anusweta Roy, Barnadip Chakraborty
Publikováno v:
Journal of Physics: Conference Series. 1797:012046
Herein we present a theoretical foray on crucial role played by the graphitic tunnelling barrier in tuning spintronic feature of two-dimensional insulating graphene layer sandwiched between two ferromagnetic graphitic carbon nitride (g- C4N3) electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::069e581bcb42f34fac55ea6e71b87248
https://doi.org/10.1088/1742-6596/1797/1/012046
https://doi.org/10.1088/1742-6596/1797/1/012046
Autor:
Aritra Acharyya, J. P. Banerjee, Subir Datta, Suranjana Banerjee, Pritam De, Kausik Das, Jit Chakraborty
Publikováno v:
International Journal of Microwave and Wireless Technologies. 5:567-578
Large-signal (L-S) characterization of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on silicon designed to operate at different millimeter-wave (mm-wave) and terahertz (THz) frequencies up to 0.5 THz is carried out i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7c79f30804f3027b3544d73d5d0f0c9
https://doi.org/10.1017/s1759078713000597
https://doi.org/10.1017/s1759078713000597
Autor:
Aritra Acharyya, Kausik Das, Pritam De, Subir Datta, Jit Chakraborty, Suranjana Banerjee, Janmajoy Banerjee
Publikováno v:
Journal of Semiconductors. 34:104003
The authors have carried out the large-signal characterization of silicon-based double-drift region (DDR) impact avalanche transit time (IMPATT) devices designed to operate up to 0.5 THz using a large-signal simulation method developed by the authors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd2c6712ab213d0398823b73df370432
https://doi.org/10.1088/1674-4926/34/10/104003
https://doi.org/10.1088/1674-4926/34/10/104003
Publikováno v:
Nanotechnology for Environmental Engineering; Mar2024, Vol. 9 Issue 1, p111-131, 21p
Publikováno v:
International Journal of Microwave & Wireless Technologies; Oct2013, Vol. 5 Issue 5, pb1-b3, 1p
Autor:
Acharyya, Aritra, Chakraborty, Jit, Das, Kausik, Datta, Subir, De, Pritam, Banerjee, Suranjana, Banerjee, J. P.
Publikováno v:
Journal of Semiconductors; Oct2013, Vol. 34 Issue 10, p104003-104010, 8p