Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Jiro Ushio"'
Autor:
Takuya Maruizumi, Jiro Ushio
Publikováno v:
ECS Transactions. 6:27-41
The transfer reaction of the positive fixed charge at the Si/SiO2 interface accompanied by hydrogen migration, which is a basic phenomenon to consider negative-bias temperature instability, was investigated using the ab initio molecular orbital metho
Publikováno v:
Applied Surface Science. 216:258-263
The role of hydrogen in negative-bias temperature instability (NBTI) at Si/SiO 2 and Si/SiO x N y interfaces was investigated by using molecular models of the interfaces and first-principles calculations. The results suggest that the hydrogen is like
Publikováno v:
Journal of Applied Physics. 92:2475-2478
The interfacial structure of nitrous-oxide- (NO-)nitrided SiO2/Si is determined on the basis of the configuration of the Pb centers and the results of physical analysis. We used electron spin-resonance analysis to observe a decrease in the number of
Autor:
Masaharu Oshima, Nobuyoshi Natsuaki, Kanta Ono, J. H. Oh, Tomoko Jinbo, Akio Shima, Jiro Ushio
Publikováno v:
Journal of Applied Physics. 89:3458-3463
We have quantitatively investigated how boron segregates to regions close to the surface, and what controls this phenomenon, using x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and backside secondary ion mass spectrometry
Publikováno v:
Thin Solid Films. 369:285-288
A non-equilibrium statistical molecular orbital approach has been developed to analyze non-equilibrium configurations in Si/SiO 2 heterostructures, improvement of which is essential for realization of superior semiconductor devices. The non-equilibri
Publikováno v:
Materials Science in Semiconductor Processing. 2:233-238
We have developed a new molecular-orbital (MO)-theory-based procedure for calculating activation energies for hole-hopping in dielectrics. The hole-hopping is assumed to consist of two steps. First, the hole hops directly from one trap site to anothe
Publikováno v:
Journal of Crystal Growth. :81-84
The potential energies of a Ge atom in the three top layers of Si(1 0 0) surfaces were evaluated by accurate density functional calculations of the model clusters and compared with the previously reported potential energies for B, Ga, and Sb. The ord
Publikováno v:
Journal of Non-Crystalline Solids. 246:73-82
Molecular orbital theory was used to examine the improved gate oxide integrity of MOS (metal-oxide-semiconductor) devices against hot-hole injection; this improvement is associated with the incorporation of a nitrogen atom and subsequent incorporatio
Autor:
Manabu Kato, Katsumi Yoneda, Tomoyuki Hamada, Seiichi Kondo, Jiro Ushio, Takahisa Ohno, Nobuyoshi Kobayashi, Shin-ichi Nakao, Yoshiaki Kamigaki
Publikováno v:
Japanese Journal of Applied Physics. 46:3351-3353
On the basis of electron spin resonance (ESR) measurements, we observed a unique paramagnetic center (Tb center, g=2.003) in porous low-dielectric-constant (low-k) carbon-doped silicon oxide (SiOCH) film after annealing the film in vacuum. Fourier tr
Autor:
Jiro Ushio, Shin-ichi Nakao, Katsumi Yoneda, Nobuyoshi Kobayashi, Takahisa Ohno, Tomoyuki Hamada, Manabu Kato
Publikováno v:
Japanese Journal of Applied Physics. 46:L405-L407
Utilizing the structure of porous SiOC determined in our previous study, we investigated a mechanism for improving the properties of porous SiOC film by ultraviolet irradiation (UV curing). The generation of a Si–O–Si cross link from an OH group