Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Jiro Tsujino"'
Publikováno v:
Surface and Coatings Technology. 204:2368-2375
Double-layer TiN/PSZ coatings approximately 2 µm thick were deposited on Si wafers and WC–Co cutting tools from Ti-, Zr-, and Y-alkoxide solutions by Ar/H 2 /N 2 thermal plasma chemical vapor deposition with water functioning as an oxidant. A PSZ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ba68a53779643f4147ca8c4643881c
https://doi.org/10.1016/j.surfcoat.2010.01.007
https://doi.org/10.1016/j.surfcoat.2010.01.007
Publikováno v:
Surface and Coatings Technology. 204:1715-1721
The double-layer deposition of composite SiC–TiBC (Ti–Si–B–C) films with various Si contents (0, 40, 55, 60 and 100 mol%) on Ti–B–C was achieved from mixtures of titanium tetra-ethoxide, boron tri-ethoxide, and/or hexa-methyl-disiloxane s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac801cfa1c3ef35b4302361fc2670ef7
https://doi.org/10.1016/j.surfcoat.2009.10.056
https://doi.org/10.1016/j.surfcoat.2009.10.056
Publikováno v:
Journal of the Japan Society of Powder and Powder Metallurgy. 57:514-519
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::057003001e19867e7eb501e7a2c10e5d
https://doi.org/10.2497/jjspm.57.514
https://doi.org/10.2497/jjspm.57.514
Publikováno v:
Journal of the Ceramic Society of Japan. 117:415-420
Composite TiBC-SiC film coatings with various contents of SiC were deposited on Si wafer at 800°C from a mixed solution of titanium tetra-ethoxide, boron tri-ethoxide and/or hexa-methyl-disiloxane by an Ar/H2 thermal plasma CVD. The crystalline phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85179ab89e7fa19b306786e2ae7028f1
https://doi.org/10.2109/jcersj2.117.415
https://doi.org/10.2109/jcersj2.117.415
Publikováno v:
Thin Solid Films. 516:6616-6621
Monolithic TiB 2 films and double layer and composite TiCN–TiB 2 films were deposited on Si wafers from a mixture of titanium tetra-ethoxide and boron tri-ethoxide solutions at a 1:2 mole ratio at 800 °C for 20 min by chemical vapor deposition in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a505b0adb8a6304790afbff9d5b8a1a
https://doi.org/10.1016/j.tsf.2007.11.093
https://doi.org/10.1016/j.tsf.2007.11.093
Publikováno v:
Surface and Coatings Technology. 202:4644-4652
Coatings of partially Y 2 O 3 -stabilized ZrO 2 (PSZ) (Y > 2 at.%) and double layered TiN/PSZ films were deposited on Si wafers at 700 °C from zirconium tetra-buthoxide (ZTBO), yttrium tri-buthoxide (YTBO) and/or titanium tetra-ethoxide by chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::033135dbc4276c0b36560e79e0780976
https://doi.org/10.1016/j.surfcoat.2008.03.035
https://doi.org/10.1016/j.surfcoat.2008.03.035
Publikováno v:
Surface and Coatings Technology. 201:7194-7200
Double layered TiN/TiBC and composite TiBCN coatings were deposited on WC–Co cutting tools from titanium tetra-ethoxide (TTEO) and boron tri-ethoxide (BTEO) solutions at 800 °C for 20 min by chemical vapor deposition (CVD) in a thermal Ar/N 2 /H 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad5af3fdb0ab672f8c6cd2415d543b04
https://doi.org/10.1016/j.surfcoat.2007.01.041
https://doi.org/10.1016/j.surfcoat.2007.01.041
Publikováno v:
Surface and Coatings Technology. 199:72-76
TiN films were deposited at low temperatures of 300–600 °C on various substrates (Si wafer, silica glass, stainless steel) by injecting titanium tetra-ethoxide (TTEO) solution at a rate of 0.05–0.3 ml min −1 into a N 2 plasma. Parameters affec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6c965ff3e93a481f20f481856c0ccbf
https://doi.org/10.1016/j.surfcoat.2005.02.092
https://doi.org/10.1016/j.surfcoat.2005.02.092
Publikováno v:
Journal of the European Ceramic Society. 25:1765-1770
Composite and compositionally graded (CGed) TiN–AlN films were deposited on Si wafers at 600 °C from Ti- and Al-alkoxide solutions by N 2 plasma-enhanced chemical vapor deposition (CVD). The films were characterized by X-ray diffraction (XRD), sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40140e679f8036ef71c90f8dfaadee53
https://doi.org/10.1016/j.jeurceramsoc.2004.12.006
https://doi.org/10.1016/j.jeurceramsoc.2004.12.006
Publikováno v:
Key Engineering Materials. :49-52
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b97e4829d6488afc1fb9332c55d060
https://doi.org/10.4028/www.scientific.net/kem.264-268.49
https://doi.org/10.4028/www.scientific.net/kem.264-268.49