Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Jiro Shinkai"'
4
High Temperature Characteristics of 4H-SiC RESURF-Type JFET
Autor: Shin Harada, Takashi Tsuno, Kenichi Sawada, Yasuo Namikawa, Jiro Shinkai, Kazuhiro Fujikawa, Hideto Tamaso, Hitoki Tokuda
Publikováno v: Materials Science Forum. :727-730
400V/2.5A 4H-SiC JFETs having a reduced surface field (RESURF) structure were fabricated. Measurements on the on-resistance, blocking and switching characteristics at high temperature were carried out. It was confirmed that the JFET has smaller depen
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::25796782e3786a71292d9cd89d84b5de
https://doi.org/10.4028/www.scientific.net/msf.615-617.727
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5
Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs
Autor: Satoshi Hatsukawa, Jiro Shinkai, Kazuhiro Fujikawa, Shin Harada, Hitoki Tokuda, Takeyoshi Masuda, Takashi Hoshino, Kenichi Sawada, Hideto Tamaso, Yasuo Namikawa
Publikováno v: Materials Science Forum. :983-986
We fabricated a multi-chip module of 4H-SiC reduced surface field (RESURF)-type lateral JFETs. A single chip consists of 4 unit devices of 2.0 mm × 0.5 mm in size, which were isolated electrically from each other. The multi-chip module consists of 8
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::92f80f3829f0e3109997e182d1510846
https://doi.org/10.4028/www.scientific.net/msf.556-557.983
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6
Design and characterization of 1.3/1.55-µm optical transceiver using straight waveguide and double-filter photodiode
Autor: Hiromi Nakanishi, Yoshiki Kuhara, Naoyuki Yamabayashi, Yasuhiro Iguchi, Takeshi Okada, Akira Yamaguchi, Jiro Shinkai
Publikováno v: Electronics and Communications in Japan (Part II: Electronics). 85:25-33
We developed a 1.3/1.55-µm optical transceiver module for use in asynchronous transfer mode-passive optical network (ATM-PON) systems, which is the global standard for optical access networks. A compact, low-cost module was implemented by mounting t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d72587636f5e8cf28a2cadbbbbbc9d64
https://doi.org/10.1002/ecjb.10028
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8
High power 14xx pump lasers with wavelength locker for co-pumped Raman amplifiers
Autor: Jiro Shinkai, Goro Sasaki, Hiroyuki Yabe, H. Go, Atsushi Miki
Publikováno v: Optical Amplifiers and Their Applications.
Distributed Raman amplification in the transmission fiber is an attractive technique to increase the transmission capacity and to extend the reach of long-haul WDM optical system [1]. The next generation WDM system is expected to offer transmission i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7da5204be2dc04a4e652f90a761429f3
https://doi.org/10.1364/oaa.2002.omb3
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9
Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers
Autor: Tsukuru Katsuyama, Ichiro Yoshida, Hideki Hayashi, Jun-ichi Hashimoto, Jiro Shinkai
Publikováno v: Applied Physics Letters. 58:879-880
We have investigated the effects of strained‐layer structures on the reduction of the threshold current density of AlGaInP/GaInP visible laser diodes. It was found that a remarkable reduction of the threshold current density could be realized by in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::27ea528ec33fa11e18e41502e234f345
https://doi.org/10.1063/1.104492
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