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pro vyhledávání: '"Jiro Katsuki"'
Autor:
Toshio Nakanishi, Masaru Sasaki, Takuya Sugawara, Shigenori Ozaki, Tomohiro Ohta, Seiji Matsuyama, Jiro Katsuki, Nobuhiko Yamamoto, Yoshihide Tada, Shigemi Murakawa
Publikováno v:
Japanese Journal of Applied Physics. 44:1232
We investigated the plasma nitridation mechanisms for an ultra-thin gate oxynitride (SiON) formation to extend the downscaling limit of equivalent oxide thickness (EOT). Using the slot plane antenna (SPA) plasma nitridation system, excellent gate SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ff1c2432cef4d676f516220dcbee395
https://doi.org/10.1143/jjap.44.1232
https://doi.org/10.1143/jjap.44.1232
