Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Jiong Ping Lu"'
Publikováno v:
IEEE Transactions on Electron Devices. 52:2703-2709
The impact of TiN capping layer on dual work functions of Ni, Co, and Co-Ni fully silicided (FUSI) metal gates was investigated. It was found that the TiN capping layer significantly altered the distribution of both n- and p-dopants during the FUSI p
Autor:
Q. Z. Hong, P.J Chen, Lissa K. Magel, Jiong-Ping Lu, H. L. Tsai, Girish A. Dixit, Joseph D. Luttmer, Robert H. Havemann, Wei-Yung Hsu
Publikováno v:
Thin Solid Films. 320:20-25
The thermal stability of Al–0.5% Cu/barrier/TiSi x multilayer structures is investigated. The barriers studied in this work are TiN films prepared by physical vapor deposition (PVD) and TiN-based barrier films prepared by metal–organic chemical v
Autor:
Yu-Pei Chen, Joseph D. Luttmer, Wei-Yung Hsu, Jiong-Ping Lu, Anthony J. Konecni, Girish A. Dixit, Robert H. Havemann
Publikováno v:
Thin Solid Films. 320:73-76
New contact fill integration schemes were developed for high aspect ratio Gb DRAM contact metallization. Integration schemes for both tungsten-plug contacts and aluminum-plug contacts were studied. For tungsten-plug contacts, various types of titaniu
Autor:
Ganming Zhao, Jiong-Ping Lu, Jingang Wu, Bing Wu, Yonggen He, Seanf Zhang, Guobin Yu, Jiyue Tang, Jin Lin
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Sub-melt millisecond anneal (MSA) is one of major anneal techniques for forming ultra-shallow and highly activated junctions. Besides post-implant anneal for source/drain and source/drain extensions, MSA has also attracted increased interests in nick
Autor:
Q. Z. Hong, J. D. Luttmer, L. K. Magel, Wei-Yung Hsu, Robert H. Havemann, Jiong-Ping Lu, Girish A. Dixit
Publikováno v:
ChemInform. 28
A new process for preparing TiN-based barrier films is reported. The process consists of thermal decomposition of a metallorganic precursor, tetrakis(dimethylamino)-titanium, followed by postdeposition annealing in silane ambient. Thin films fabricat
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
Laser spike anneal (LSA) is one of major millisecond anneal techniques for forming ultra-shallow and highly activated junctions. With its ultra-fast heating capability, LSA has found a range of applications in ultra-shallow junction (USJ) application
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
As CMOS devices are scaled down, dopant activation, junction profile control and silicide engineering become increasingly important. To address these ultra-shallow junction (USJ) challenges, millisecond anneal (MSA) has emerged as a main stream therm
Publikováno v:
Journal of Crystal Growth. 124:16-22
We present in-situ mass spectroscopy studies of surface reactions of dimethylaminoarsine and tertiarybutylarsine under metalorganic molecular beam epitaxy conditions. The results show that the thermal decomposition of dimethylaminoarsine is completed
Publikováno v:
Thin Solid Films. 205:236-240
Films of gallium arsenide were deposited under ultra-high vacuum (UHV) conditions onto a silicon (100) substrate at 400 °C using a single organometallic precursor containing both Group III and Group V elements. Characterization of the films by Auger
Autor:
Rishi Raj, Jiong-Ping Lu
Publikováno v:
Journal of Materials Research. 6:1913-1918
Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ character