Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jinwoong Jeong"'
Autor:
Jaeu Park, Jinwoong Jeong, Minseok Kang, Nagwade Pritish, Youngjun Cho, Jeongdae Ha, Junwoo Yea, Kyung-In Jang, Hyojin Kim, Jumin Hwang, Byungchae Kim, Sungjoon Min, Hoijun Kim, Soonchul Kwon, ChangSik John Pak, HyunSuk Peter Suh, Joon Pio Hong, Sanghoon Lee
Publikováno v:
npj Flexible Electronics, Vol 7, Iss 1, Pp 1-11 (2023)
Abstract Surface electromyography (sEMG) sensors play a critical role in diagnosing muscle conditions and enabling prosthetic device control, especially for lower extremity robotic legs. However, challenges arise when utilizing such sensors on residu
Externí odkaz:
https://doaj.org/article/a71e698e36634f72ae2d412011b5a8c0
Autor:
Pritish Nagwade, Minseok Kang, Jaeu Park, Jinwoong Jeong, Heejae Shin, Youngjun Cho, Sanghoon Lee
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 10, Pp n/a-n/a (2023)
Human skeletal muscle is widely considered to be the most efficient actuator, leading to extensive research on developing artificial muscles. Bioinspired technologies such as soft robotics and biomimetics are used to produce artificial muscles with p
Externí odkaz:
https://doaj.org/article/ec52105b188e4568a3f5d2c8701e9252
Publikováno v:
Micro and Nano Systems Letters, Vol 11, Iss 1, Pp 1-9 (2023)
Abstract Microneedle electrode (ME) is used to monitor bioelectrical signals by penetrating via the skin, and it compensates for a limitation of surface electrodes. However, existing fabrication of ME have limited in controlling the shape of micronee
Externí odkaz:
https://doaj.org/article/3eaddaa09b3d4da19899e304f0f4d2f8
Autor:
Byungchoul Park, Byungwook Ahn, Hyun-Seung Choi, Jinwoong Jeong, Kangmin Hwang, Taewoo Kim, Myung-Jae Lee, Youngcheol Chae
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Publikováno v:
IEEE Journal of Solid-State Circuits. 55:2878-2888
This article presents a 5.2-Mpixel, 12-in wafer-scale CMOS X-ray detector that consists of lithographically stitched 169 sub-chips. The detector employs a 3T pixel with a voltage-controlled storage capacitor to achieve both a low dark random noise (R
28.3 A 5.2Mpixel 88.4dB-DR 12in CMOS X-Ray Detector with 16b Column-Parallel Continuous-Time ΔΣ ADCs
Publikováno v:
ISSCC
CMOS X-ray detectors used in industrial and medical equipment should provide a full image depth even for a specific region of interest, and require high resolution, low noise, and wide DR in a wafer-scale detector [1], [4]. To achieve a wide DR, a la