Zobrazeno 1 - 10
of 125
pro vyhledávání: '"Jinshun Bi"'
Autor:
Qiang Wang, Yachuan Wang, Yankun Wang, Luyue Jiang, Jinyan Zhao, Zhitang Song, Jinshun Bi, Libo Zhao, Zhuangde Jiang, Jutta Schwarzkopf, Shengli Wu, Bin Zhang, Wei Ren, Sannian Song, Gang Niu
Publikováno v:
InfoMat, Vol 6, Iss 8, Pp n/a-n/a (2024)
Abstract In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits, the reliable electronic synapses mimicked by single device that achieves diverse long‐term and short‐term plasticity are essent
Externí odkaz:
https://doaj.org/article/c1e51ddd2fca4efe8267741d1d054829
Autor:
Chongyang Hou, Shuye Zhang, Rui Liu, Thomas Gemming, Alicja Bachmatiuk, Hongbin Zhao, Hao Jia, Shirong Huang, Weijia Zhou, Jian‐Bin Xu, Jinbo Pang, Mark H. Rümmeli, Jinshun Bi, Hong Liu, Gianaurelio Cuniberti
Publikováno v:
InfoMat, Vol 6, Iss 7, Pp n/a-n/a (2024)
Abstract Flexible electronics has emerged as a continuously growing field of study. Two‐dimensional (2D) materials often act as conductors and electrodes in electronic devices, holding significant promise in the design of high‐performance, flexib
Externí odkaz:
https://doaj.org/article/d11f6b085d3c4738afc05a95fbba2dc6
Publikováno v:
Micromachines, Vol 14, Iss 12, p 2207 (2023)
Ultra-Low-Power Non-Volatile Memory (UltraRAM), as a promising storage device, has attracted wide research attention from the scientific community. Non-volatile data retention in combination with switching at ≤2.6 V is achieved through the use of t
Externí odkaz:
https://doaj.org/article/5c38d6a7049e44fda4683a2fe7dc2c7c
Autor:
Qiang Wang, Gang Niu, Ruobing Wang, Ren Luo, Zuo-Guang Ye, Jinshun Bi, Xi Li, Zhitang Song, Wei Ren, Sannian Song
Publikováno v:
Journal of Materiomics, Vol 8, Iss 2, Pp 382-391 (2022)
Hardware electronic synapse and neuro-inspired computing system based on phase change random access memory (PCRAM) have attracted an extensive investigation. However, due to the intrinsic asymmetric reversible phase transition, the defective weight u
Externí odkaz:
https://doaj.org/article/09ece65b6d5b410982e9c12afd5ec63b
Autor:
I. Yu. Lovshenko, A. Yu. Voronov, P. S. Roshchenko, R. E. Ternov, Ya. D. Galkin, A. V. Kunts, V. R. Stempitsky, Jinshun Bi
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 8, Pp 81-86 (2022)
The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current
Externí odkaz:
https://doaj.org/article/90674db11cc94aa191230d8e13bcc40f
Publikováno v:
Nanomaterials, Vol 13, Iss 4, p 638 (2023)
A full understanding of the impact of charge trapping on the memory window (MW) of HfO2-based ferroelectric field effect transistors (FeFETs) will permit the design of program and erase protocols, which will guide the application of these devices and
Externí odkaz:
https://doaj.org/article/50fe6a0261c743c3a19d4f1201a324e9
Publikováno v:
IEEE Access, Vol 8, Pp 154898-154905 (2020)
Based on 22 nm ultrathin-body fully depleted silicon-on-insulator (UTB-FDSOI) transistors, we propose a novel structure of buried insulator layer aiming at total ionizing dose (TID) effects mitigation. Using technology computer-aided design (TCAD) to
Externí odkaz:
https://doaj.org/article/f266e2bf5666490ca2a2e5862545176e
Publikováno v:
Nanomaterials, Vol 12, Iss 23, p 4344 (2022)
In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based transi
Externí odkaz:
https://doaj.org/article/8ae7ec6d4d4148d498cd608511525926
Autor:
Biyao Zhao, Yunting Yan, Jinshun Bi, Gaobo Xu, Yannan Xu, Xueqin Yang, Linjie Fan, Mengxin Liu
Publikováno v:
Nanomaterials, Vol 12, Iss 17, p 3001 (2022)
In the doped hafnia(HfO2)-based films, crystallization annealing is indispensable in forming ferroelectric phases. In this paper, we investigate the annealing effects of TiN/Hf0.5Zr0.5O2/TiN metal-ferroelectric-metal (MFM) capacitors by comparing mic
Externí odkaz:
https://doaj.org/article/78c8f94e3e234d24a1142f911fe7ea5f
Publikováno v:
Sensors, Vol 20, Iss 14, p 3946 (2020)
This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event tran
Externí odkaz:
https://doaj.org/article/f4c95db7a4a145a8864dfd1ce49f5891