Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Jinsheng Luo"'
Publikováno v:
International Conference on Cloud Computing, Performance Computing, and Deep Learning (CCPCDL 2022).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e2e7e6828d1693c6e2e53df85813f14
https://doi.org/10.1117/12.2641123
https://doi.org/10.1117/12.2641123
Publikováno v:
Traitement du Signal. 38:1253-1257
The current target tracking and detection algorithms often have mistakes and omissions when the target is occluded or small. To overcome the defects, this paper integrates bi-directional feature pyramid network (BiFPN) into cascade region-based convo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d301c6595edfb535263694589f15be0c
https://doi.org/10.18280/ts.380437
https://doi.org/10.18280/ts.380437
Publikováno v:
In Microelectronics Journal February 2004 35(2):145-149
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 20:1218-1225
Ideas for using the boundary element method (BEM) with the concept of critical electric field for simulation of high-voltage junction termination are introduced. Approaches for dealing with interface charges, depleted regions, and metal field plates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a79d6917db71a319be0a4a91de2db9f7
https://doi.org/10.1109/43.952738
https://doi.org/10.1109/43.952738
Publikováno v:
Chinese Science Bulletin. 42:374-377
A variable-capacitance model suitable for MMIC active voltage-controlled filter has been reported. The analytical expression is also given for the gate capacitance as a function of the gate bias. Since the free carrier move in active region for contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb27ae2d53ea1416ee9977d02d084b36
https://doi.org/10.1007/bf02884224
https://doi.org/10.1007/bf02884224
Publikováno v:
Chinese Physics Letters. 10:433-436
We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al0.35Ga0.65As/GaAs (50/40/100 angstrom) asymmetric coupled-double-quantum-wells p-i-n structure by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cc217fdfd48abbe234bfc8757e7ace0
https://doi.org/10.1088/0256-307x/10/7/013
https://doi.org/10.1088/0256-307x/10/7/013
Publikováno v:
Superlattices and Microstructures. 12:231-235
The excitation power dependence of nonresonant tunneling rates for photogenerated carriers is studied in a GaAs/Al 0.35 Ga 0.65 As/GaAs (50A/40A/100A) asymmetric double quantum well p-i-n structure by photoluminescence (PL) measurement. It is found t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2573a017cbf47a8fd4aa3a8db1498934
https://doi.org/10.1016/0749-6036(92)90343-4
https://doi.org/10.1016/0749-6036(92)90343-4
Autor:
Jinsheng Luo, Wenhong Li
Publikováno v:
1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105).
In this paper, a novel analytical physical model for a thin film SOI RESURF structure is developed, based on the 2D Poisson equation, and the influence of the field SiO/sub 2/ interface charge is considered. The thin film SOI RESURF structure is anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b7e24f2382f6c2c824680269bafa1c9
https://doi.org/10.1109/icsict.1998.786077
https://doi.org/10.1109/icsict.1998.786077
Publikováno v:
1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105).
An AlN film has been deposited by d.c. magnetron reactive sputtering. The stoichiometry, dielectric constant, breakdown strength, density, refractive index and stress of the films were measured. The surface roughness of the AlN film was studied by at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec81bc424ac7c84eb2771df682ed65f
https://doi.org/10.1109/icsict.1998.786064
https://doi.org/10.1109/icsict.1998.786064
Publikováno v:
Proceedings of 4th International Conference on Solid-State and IC Technology.
The hydrogenated nano-crystalline silicon films (nc-Si:H) were prepared by using the ultra-high vaccum PECVD system. The nc-Si:H films consist of a mass of nano-grains and a great deal of interfaces between grains. It was found that the room temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87a35a48d5e756550fcec9e43c42af8c
https://doi.org/10.1109/icsict.1995.499273
https://doi.org/10.1109/icsict.1995.499273