Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Jinseong Heo"'
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Taehwan Moon, Hyun Jae Lee, Seunggeol Nam, Hagyoul Bae, Duk-Hyun Choe, Sanghyun Jo, Yun Seong Lee, Yoonsang Park, J Joshua Yang, Jinseong Heo
Publikováno v:
Neuromorphic Computing and Engineering, Vol 3, Iss 2, p 024001 (2023)
We propose a novel synaptic design of more efficient neuromorphic edge-computing with substantially improved linearity and extremely low variability. Specifically, a parallel arrangement of ferroelectric tunnel junctions (FTJ) with an incremental pul
Externí odkaz:
https://doaj.org/article/db5675976ec94bde8fc43525d5ede6de
Autor:
Quoc An Vu, Yong Seon Shin, Young Rae Kim, Van Luan Nguyen, Won Tae Kang, Hyun Kim, Dinh Hoa Luong, Il Min Lee, Kiyoung Lee, Dong-Su Ko, Jinseong Heo, Seongjun Park, Young Hee Lee, Woo Jong Yu
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-8 (2016)
Traditional non-volatile memories suffer from poor scalability in the vertical direction due to the use of a bulky oxide layer. Here, the authors develop a tunnelling random access memory using a vertical heterostructure composed of atomically thin m
Externí odkaz:
https://doaj.org/article/228e09379679498e976be30f4043dfb4
Autor:
Sanghyun Jo, Hyangsook Lee, Duk-Hyun Choe, Jung-Hwa Kim, Yun Seong Lee, Owoong Kwon, Seunggeol Nam, Yoonsang Park, Kihong Kim, Byeong Gyu Chae, Sangwook Kim, Seunghun Kang, Taehwan Moon, Hagyoul Bae, Jung Yeon Won, Dong-Jin Yun, Myoungho Jeong, Hyun Hwi Lee, Yeonchoo Cho, Kwang-Hee Lee, Hyun Jae Lee, Sangjun Lee, Kab-Jin Nam, Dongjin Jung, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Seongjun Park, Yunseok Kim, Eunha Lee, Jinseong Heo
Publikováno v:
Nature Electronics. 6:390-397
Autor:
Seok Joo Kim, Woo-Bin Jung, Han Sae Jung, Min-Hyun Lee, Jinseong Heo, Adrian Horgan, Xavier Godron, Donhee Ham
Publikováno v:
MRS Bulletin.
Autor:
Seunghun Kang, Woo-Sung Jang, Anna N. Morozovska, Owoong Kwon, Yeongrok Jin, Young-Hoon Kim, Hagyoul Bae, Chenxi Wang, Sang-Hyeok Yang, Alex Belianinov, Steven Randolph, Eugene A. Eliseev, Liam Collins, Yeehyun Park, Sanghyun Jo, Min-Hyoung Jung, Kyoung-June Go, Hae Won Cho, Si-Young Choi, Jae Hyuck Jang, Sunkook Kim, Hu Young Jeong, Jaekwang Lee, Olga S. Ovchinnikova, Jinseong Heo, Sergei V. Kalinin, Young-Min Kim, Yunseok Kim
Publikováno v:
Science. 376:731-738
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO 2 )–based ferroelectrics that are compatible with atomic-l
Autor:
Suraj S. Cheema, Nirmaan Shanker, Li-Chen Wang, Cheng-Hsiang Hsu, Shang-Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Gomez, Wriddhi Chakraborty, Wenshen Li, Jong-Ho Bae, Steve K. Volkman, Daewoong Kwon, Yoonsoo Rho, Gianni Pinelli, Ravi Rastogi, Dominick Pipitone, Corey Stull, Matthew Cook, Brian Tyrrell, Vladimir A. Stoica, Zhan Zhang, John W. Freeland, Christopher J. Tassone, Apurva Mehta, Ghazal Saheli, David Thompson, Dong Ik Suh, Won-Tae Koo, Kab-Jin Nam, Dong Jin Jung, Woo-Bin Song, Chung-Hsun Lin, Seunggeol Nam, Jinseong Heo, Narendra Parihar, Costas P. Grigoropoulos, Padraic Shafer, Patrick Fay, Ramamoorthy Ramesh, Souvik Mahapatra, Jim Ciston, Suman Datta, Mohamed Mohamed, Chenming Hu, Sayeef Salahuddin
Publikováno v:
Nature, vol 604, iss 7904
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to a fundamental changein the
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 71:1-8
Autor:
Hagyoul Bae, Jinseong Heo, Sung-Hyun Kim, Sanghyun Jo, Yunseong Lee, Duk-Hyun Choe, Taehwan Moon, Seung-Geol Nam
Publikováno v:
Materials Today. 50:8-15
Fluorite-structure ferroelectrics — in particular the orthorhombic phase of HfO2 — are of paramount interest to academia and industry because they show unprecedented scalability down to 1-nm-thick size and are compatible with Si electronics. Howe
Autor:
Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung‐Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo, Min Hyuk Park
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-