Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jinru Lai"'
Autor:
Xu Zheng, Lizhou Wu, Yuanlu Xie, Jinru Lai, Wenxuan Sun, Jie Yu, Danian Dong, Zhaoan Yu, Xiaoyong Xue, Bing Chen, Yan Yang, Xiaoxin Xu, Qi Liu, Ming Liu
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract In this work, a machine learning‐assisted prediction model is proposed to analyze the reliability issues in the 28 nm resistive random access memory (RRAM) chip with raw data measured from RRAM test chip. The neural network of long‐short
Externí odkaz:
https://doaj.org/article/8d0e7e76f7a649c7bd6b19023071e947
Autor:
Renrui Fang, Shaocong Wang, Woyu Zhang, Kuan Ren, Wenxuan Sun, Fei Wang, Jinru Lai, Peiwen Zhang, Xiaoxin Xu, Qing Luo, Ling Li, Zhongrui Wang, Dashan Shang
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 4, Pp n/a-n/a (2024)
Abstract Time‐delayed reservoir computing with marked strengths of friendly hardware implementation and low training cost is regarded as a promising solution to realize time and energy‐efficient time series information processing and thus receive
Externí odkaz:
https://doaj.org/article/fd16f9a20ac144648b43eeeb01d63976
Autor:
Danian Dong, Jinru Lai, Yan Yang, Tiancheng Gong, Xu Zheng, Wenxuan Sun, Jie Yu, Shaoyang Fan, Xiaoxin Xu
Publikováno v:
Micromachines, Vol 14, Iss 11, p 2098 (2023)
Stochastic computing (SC) is widely known for its high error tolerance and efficient computing ability of complex functions with remarkably simple logic gates. The noise of electronic devices is widely used to be the entropy source due to its randomn
Externí odkaz:
https://doaj.org/article/0199d679fc6846b28d382a6ee3266e8f
Autor:
Jie Yu, Woyu Zhang, Danian Dong, Wenxuan Sun, Jinru Lai, Xu Zheng, Tiancheng Gong, Yi Li, Dashan Shang, Guozhong Xing, Xiaoxin Xu
Publikováno v:
Micromachines, Vol 13, Iss 2, p 308 (2022)
In embedded neuromorphic Internet of Things (IoT) systems, it is critical to improve the efficiency of neural network (NN) edge devices in inferring a pretrained NN. Meanwhile, in the paradigm of edge computing, device integration, data retention cha
Externí odkaz:
https://doaj.org/article/76882724e16548aea3f4a94a6ba64ea6
Autor:
Xu Zheng, Lizhou Wu, Danian Dong, Jie Yu, Jinru Lai, Wunxuan Sun, Xiaoyong Xue, Bing Chen, Wan Pang, Xiaoxin Xu
Publikováno v:
IEEE Electron Device Letters. 44:919-922
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67516661420f173fc9ccebed52a02f23
https://doi.org/10.1109/led.2023.3269080
https://doi.org/10.1109/led.2023.3269080
Publikováno v:
IEEE Electron Device Letters. 43:866-869
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fd60374e0a8b36bc1871690a5ad56ba
https://doi.org/10.1109/led.2022.3165831
https://doi.org/10.1109/led.2022.3165831
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::285045f0be5384b7fad69a3a3fcdea56
https://doi.org/10.1109/snw56633.2022.9889060
https://doi.org/10.1109/snw56633.2022.9889060
Effect of conductive filament morphology on soft error of oxide based Resistive Random Access Memory
Publikováno v:
2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f49ddd883c82db8105d0e67541fcd51d
https://doi.org/10.1109/icta53157.2021.9661604
https://doi.org/10.1109/icta53157.2021.9661604