Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Jinrong Yuan"'
Publikováno v:
2021 IEEE 66th Holm Conference on Electrical Contacts (HLM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01eac1b20d6e3b20f6b329f5c4eba5f3
https://doi.org/10.1109/hlm51431.2021.9671195
https://doi.org/10.1109/hlm51431.2021.9671195
Publikováno v:
IEEE Journal of Quantum Electronics. 50:1-7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a17c9dd735f37eba7ae9c6a02cb9af24
https://doi.org/10.1109/jqe.2014.2356133
https://doi.org/10.1109/jqe.2014.2356133
Publikováno v:
Optical and Quantum Electronics. 45:271-277
This paper reports the dark current characteristics of SWIR and MWIR p–i–n photodiodes with type-II InGaAs/GaAsSb multiple quantum wells as the absorption region. A bulk based model with the effective band gap of the type-II quantum well structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5573772a85acf20dc6ac22e7e7101716
https://doi.org/10.1007/s11082-012-9624-6
https://doi.org/10.1007/s11082-012-9624-6
Publikováno v:
physica status solidi c. 9:251-254
Quantum-well photodetectors based on lattice-matched InGaAs/GaAsSb heterostructures on InP are promising candidates for mid-infrared detection. However, the dark current in these devices can be elevated by the presence of deep levels. In this work, b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2de5a5aefebef6d632b8b6a775a74e27
https://doi.org/10.1002/pssc.201100239
https://doi.org/10.1002/pssc.201100239
Publikováno v:
IEEE Journal of Quantum Electronics. 47:1244-1250
This paper presents the performance characteristics of InP-based p-i-n photodiodes with strain-compensated and lattice-matched InGaAs/GaAsSb type-II multiple quantum well (MQW) absorption regions. The results show that photodiodes with strain-compens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c758298d01359ddf62e375b3ca33ea
https://doi.org/10.1109/jqe.2011.2160450
https://doi.org/10.1109/jqe.2011.2160450
Publikováno v:
IEEE Photonics Technology Letters. 23:218-220
An InP-based p-i-n photodiode with optical response out to 3.4 μm was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nm In0.34Ga0.66As/5-nm GaAs0.25Sb0.75 quantum wells strain compensated to InP were used as the absorptio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b6d9a6036c097809ea1aa78e958a14f
https://doi.org/10.1109/lpt.2010.2096205
https://doi.org/10.1109/lpt.2010.2096205
Publikováno v:
70th Device Research Conference.
InP-based multiple quantum well (MQW) photodiodes in the InGaAs/GaAsSb material system are promising for mid-infrared detection [1]; by including strain in these devices, the detection wavelength has been extended to beyond 3 µm [2]. However, owing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9e3ae3737a853e38e6c74aa862c2987
https://doi.org/10.1109/drc.2012.6256970
https://doi.org/10.1109/drc.2012.6256970
Publikováno v:
2011 Numerical Simulation of Optoelectronic Devices.
In this paper, the transition wavelength and wave function overlap of type-II In x Ga 1−x As/GaAs 1−y Sb y quantum wells are numerically calculated using a 4-band k · p Hamiltonian model. The simulation results indicate that absorption wavelengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb05cd1be5faaaf44d96724d4086c175
https://doi.org/10.1109/nusod.2011.6041114
https://doi.org/10.1109/nusod.2011.6041114
Publikováno v:
SPIE Proceedings.
This paper reports the results of modeling of the electrical characteristics of SWIR/MWIR p-i-n photodiodes with type II InGaAs/GaAsSb multiple quantum wells (MQWs) as the absorption region. Bulk based model with the effective band gap of the type-II
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa25054a1f0a3fe31258aa3b55f601e9
https://doi.org/10.1117/12.886475
https://doi.org/10.1117/12.886475
Publikováno v:
SPIE Proceedings.
GaInAs/GaAsSb type-II multiple quantum wells (MQWs) grown on InP substrates by molecular beam epitaxy (MBE) were investigated for potential use in p-i-n photodiodes operating in the mid-infrared spectral region. In these quantum well structures, elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb2095b16297b30a4a85f6dd4e2f12e1
https://doi.org/10.1117/12.849562
https://doi.org/10.1117/12.849562