Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Jinq-Min LIn"'
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38bef106f92f824abe72cadb163b0259
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134106
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134106
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19bda853df55e0cf0ce3591015fb37cc
https://doi.org/10.1109/vlsi-tsa54299.2022.9770962
https://doi.org/10.1109/vlsi-tsa54299.2022.9770962
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1caed63551472f9d128ece59ad1d835c
https://doi.org/10.1109/vlsi-tsa54299.2022.9771022
https://doi.org/10.1109/vlsi-tsa54299.2022.9771022
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d2c632416aafa33d4ae665f7e59d199
https://doi.org/10.7567/ssdm.2020.a-3-04
https://doi.org/10.7567/ssdm.2020.a-3-04
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57e86cf34549719aa21f34daf995b402
https://doi.org/10.7567/ssdm.2020.a-3-03
https://doi.org/10.7567/ssdm.2020.a-3-03
Publikováno v:
2019 IEEE MTT-S International Microwave Symposium (IMS).
A new observation of significant differences in the high frequency device parameters and performance like fT and fMAX is identified from the comparison of 3-terminal (3T) and 4-terminal (4T) multi-finger (MF) nMOSFETs. Through an extensive characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54dcc58ce1027d21d9f0e9ba13aee49d
https://doi.org/10.1109/mwsym.2019.8700891
https://doi.org/10.1109/mwsym.2019.8700891
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Multi-finger (MF) and multi-ring (MR) nMOSFETs were designed and fabricated in 40nm CMOS technology to explore the layout dependent effects in key device parameters and parasitic RC responsible for RF performance. For the first time, the experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a75479a064d6fd4ee46fe533812dc784
https://doi.org/10.1109/vlsi-tsa.2019.8804636
https://doi.org/10.1109/vlsi-tsa.2019.8804636
Autor:
Hsuan-Han Chen, Osbert Cheng, Steve S. Chung, T. P. Chen, Jinq-Min Lin, E-Ray Hsieh, M. J. Jiang, T. J. Chen, Y. H. Yeah
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
For the first time, RTN measurement is utilized to measure the temperature (T) distribution along the channel, induced by Self-heating effect(SHE). The results have shown that the channel temperature of 14nm pFinFET is 170K higher than that of nFinFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc039da37a67abf91f08a15176d67ed5
https://doi.org/10.1109/edtm.2018.8421479
https://doi.org/10.1109/edtm.2018.8421479
Autor:
Chun-Hu Cheng, Steve S. Chung, J. L. Kuo, T. J. Chen, Y. H. Yeah, T. P. Chen, Meng-Ru Jiang, Y. C. Kuo, H. W. Cheng, Osbert Cheng, Chuan-Hsi Liu, E-Ray Hsieh, Jinq-Min Lin
Publikováno v:
2017 Symposium on VLSI Technology.
For the first time, the ion-vacancy-based bipolar RRAM has been demonstrated on HKMG stack of FEOL logic 14nm FinFET. A unit cell with two identical FinFETs, one serves as a control transistor and the other one is the storage with resistance switchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05821360e5db525758c1ea338e88b25b
https://doi.org/10.23919/vlsit.2017.7998204
https://doi.org/10.23919/vlsit.2017.7998204
Publikováno v:
IEEE Transactions on Power Electronics. 29:4959-4969
The proposed quasiresonant control scheme can be widely used in a dc–dc flyback converter because it can achieve high efficiency with minimized external components. The proposed dynamic frequency selector improves conversion efficiency especially a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::774139ae24c076eb1ba78536891dce77
https://doi.org/10.1109/tpel.2013.2263040
https://doi.org/10.1109/tpel.2013.2263040