Zobrazeno 1 - 10
of 150
pro vyhledávání: '"Jinkyoung, Yoo"'
Autor:
Yeonjoo Lee, Towfiq Ahmed, Xuejing Wang, Michael T. Pettes, Yeonhoo Kim, Jeongwon Park, Woo Seok Yang, Kibum Kang, Young Joon Hong, Soyeong Kwon, Jinkyoung Yoo
Publikováno v:
APL Materials, Vol 12, Iss 3, Pp 031103-031103-7 (2024)
Heterogeneous integration of two-dimensional materials and the conventional semiconductor has opened opportunities for next-generation semiconductor devices and their processing. Heterogeneous integration has been studied for economical manufacturing
Externí odkaz:
https://doaj.org/article/067baf2451e9441fbb489a47b52c4071
Publikováno v:
Nano Convergence, Vol 10, Iss 1, Pp 1-14 (2023)
Abstract Remote epitaxy has opened novel opportunities for advanced manufacturing and heterogeneous integration of two-dimensional (2D) materials and conventional (3D) materials. The lattice transparency as the fundamental principle of remote epitaxy
Externí odkaz:
https://doaj.org/article/2290baa6cdcf461c898207339fe493c6
Autor:
Xuejing Wang, Ryan Kaufmann, Andrew C. Jones, Renjie Chen, Towfiq Ahmed, Michael T. Pettes, Paul G. Kotula, Ismail Bilgin, Yongqiang Wang, Swastik Kar, Jinkyoung Yoo
Publikováno v:
Materials Today Advances, Vol 19, Iss , Pp 100401- (2023)
Growing three-dimensional (3D) materials on two-dimensional (2D) van der Waals surface has shown its effectiveness in overcoming materials incompatibility for stacking transferrable membranes toward advanced device manufacturing. Herein, we demonstra
Externí odkaz:
https://doaj.org/article/31458e2057424c9d9d8fa91c8e5e9242
Autor:
Pinku Roy, Adra Carr, Tao Zhou, Binod Paudel, Xuejing Wang, Di Chen, Kyeong Tae Kang, Anastasios Pateras, Zachary Corey, Shizeng Lin, Jian‐Xin Zhu, Martin V. Holt, Jinkyoung Yoo, Vivien Zapf, Hao Zeng, Filip Ronning, Quanxi Jia, Aiping Chen
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract The discovery of topological Hall effect (THE) has important implications for next‐generation high‐density nonvolatile memories, energy‐efficient nanoelectronics, and spintronic devices. Both real‐space topological spin configuration
Externí odkaz:
https://doaj.org/article/f424e90227ba46f8b71f00e5ffd7f108
Autor:
Kyeong Tae Kang, Zachary J Corey, Jaejin Hwang, Yogesh Sharma, Binod Paudel, Pinku Roy, Liam Collins, Xueijing Wang, Joon Woo Lee, Yoon Seok Oh, Yeonhoo Kim, Jinkyoung Yoo, Jaekwang Lee, Han Htoon, Quanxi Jia, Aiping Chen
Publikováno v:
Advanced Science, Vol 10, Iss 15, Pp n/a-n/a (2023)
Abstract Transition metal oxides exhibit a plethora of electrical and magnetic properties described by their order parameters. In particular, ferroic orderings offer access to a rich spectrum of fundamental physics phenomena, in addition to a range o
Externí odkaz:
https://doaj.org/article/22bbb4203c3f48a0ab6b3904edbafeec
Facet-selective morphology-controlled remote epitaxy of ZnO microcrystals via wet chemical synthesis
Autor:
Joonghoon Choi, Dae Kwon Jin, Junseok Jeong, Bong Kyun Kang, Woo Seok Yang, Asad Ali, Jinkyoung Yoo, Moon J. Kim, Gyu-Chul Yi, Young Joon Hong
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Abstract We report on morphology-controlled remote epitaxy via hydrothermal growth of ZnO micro- and nanostructure crystals on graphene-coated GaN substrate. The morphology control is achieved to grow diverse morphologies of ZnO from nanowire to micr
Externí odkaz:
https://doaj.org/article/0742ec012626473cba2b84494c180df9
Autor:
Xuejing Wang, Yung-Chen Lin, Chia-Tse Tai, Seok Woo Lee, Tzu-Ming Lu, Sun Hae Ra Shin, Sadhvikas J. Addamane, Chris Sheehan, Jiun-Yun Li, Yerim Kim, Jinkyoung Yoo
Publikováno v:
APL Materials, Vol 10, Iss 11, Pp 111108-111108-7 (2022)
Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW
Externí odkaz:
https://doaj.org/article/ad8c45cce7ab47de825cb508b9a195ff
Autor:
Zachary Corey, Henry H. Han, Kyeong Tae Kang, Xuejing Wang, Rebecca A. Lalk, Binod Paudel, Pinku Roy, Yogesh Sharma, Jinkyoung Yoo, Quanxi Jia, Aiping Chen
Publikováno v:
Advanced Materials Interfaces, Vol 9, Iss 11, Pp n/a-n/a (2022)
Abstract A variety of mechanisms are reported to play critical roles in contributing to the high carrier/electron mobility in oxide/SrTiO3 (STO) heterostructures. By using La0.95Sr0.05TiO3 (LSTO) epitaxially grown on different single crystal substrat
Externí odkaz:
https://doaj.org/article/b5ba18f42c25427786b08c0b66897649
Resolving surface potential variation in Ge/MoS2 heterostructures with Kelvin probe force microscopy
Autor:
Sanguk Woo, Jinkyoung Yoo, David J. Magginetti, Ismail Bilgin, Swastik Kar, Heayoung P. Yoon, Yohan Yoon
Publikováno v:
AIP Advances, Vol 11, Iss 12, Pp 125105-125105-6 (2021)
In this work, we employ an atomic force microscopy-based technique, Kelvin probe force microscopy, to analyze heterogeneities of four different 2D/3D Ge/MoS2 heterostructures with Ge chemical vapor deposition (CVD) time. High-contrast spatially resol
Externí odkaz:
https://doaj.org/article/65b240cc8e9b4a98a628cbe2c7f947d6
Autor:
Yeonhoo Kim, Roxanne Tutchton, Ren Liu, Sergiy Krylyuk, Jian-Xin Zhu, Albert V. Davydov, Young Joon Hong, Jinkyoung Yoo
Publikováno v:
APL Materials, Vol 9, Iss 9, Pp 091107-091107-7 (2021)
Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their c
Externí odkaz:
https://doaj.org/article/375a0506156743558406538bba836df8