Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Jinkwan Kwoen"'
Publikováno v:
Electronics Letters, Vol 59, Iss 16, Pp n/a-n/a (2023)
Abstract This study investigates the development of InAs quantum dot (QD) lasers on a InP(001) substrate, utilizing only III‐arsenide layers. This approach avoids the issues associated with the use of phosphorus compounds, which are evident in the
Externí odkaz:
https://doaj.org/article/4b3365545dca4f2f8abe78b9c3a896ce
Autor:
Yasuhiko Arakawa, Jinkwan Kwoen
Publikováno v:
Crystal Growth & Design. 20:5289-5293
Reflection high-energy electron diffraction (RHEED) has wide application because it allows in situ observation of the sample surface behavior during molecular beam epitaxy growth. In particular, th...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ccd02eb2de2a53a0079badecbc792d9
https://doi.org/10.1021/acs.cgd.0c00506
https://doi.org/10.1021/acs.cgd.0c00506
Autor:
Jinkwan Kwoen, Yasuhiko Arakawa
Publikováno v:
Journal of Crystal Growth. 593:126780
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da75acfc0261233749293055aad4f13d
https://doi.org/10.1016/j.jcrysgro.2022.126780
https://doi.org/10.1016/j.jcrysgro.2022.126780
Publikováno v:
Electronics Letters, Vol 57, Iss 14, Pp 567-568 (2021)
InAs quantum dots (QDs) are receiving attention as next‐generation E‐band light source that offers high‐temperature operation and temperature insensitive operation. However, high‐density crystal defects occur at the interface between the InGa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a5db3b6ef1614eef957c73e4067b799
https://doaj.org/article/4599055a06bd4b7e9ffb9a93588e88c2
https://doaj.org/article/4599055a06bd4b7e9ffb9a93588e88c2
Autor:
Jinkwan Kwoen, Yasuhiko Arakawa
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::833935680775c3a0c8d4a83fffab1a45
https://doi.org/10.7567/ssdm.2020.k-5-01
https://doi.org/10.7567/ssdm.2020.k-5-01
Publikováno v:
Optics Express. 30:6617
We present an erratum to correct inadvertent errors in our paper [Opt. Express 29, 29378 (2021)10.1364/OE.433030]. The corrections do not affect the main conclusion.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f03fa01842733361898abb95109d506d
https://doi.org/10.1364/oe.455170
https://doi.org/10.1364/oe.455170
Publikováno v:
physica status solidi (a). 219:2100419
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21d553c831ab438db6d180cc8c767977
https://doi.org/10.1002/pssa.202100419
https://doi.org/10.1002/pssa.202100419
Publikováno v:
Optics Express. 29:29378
With the development of dry fiber over the past two decades, the E-band has become a new telecommunication wavelength. However, owing to material constraints, an effective high-performance semiconductor light source has not yet been realized. InAs qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30db462ef685885d4d6889feb89d5ffb
https://doi.org/10.1364/oe.433030
https://doi.org/10.1364/oe.433030
Autor:
Jinkwan Kwoen, Satoshi Iwamoto, Makoto Izumi, Takahiro Doe, Hirofumi Yoshikawa, Yasuhiko Arakawa
Publikováno v:
Electronics Letters. 54:1395-1397
Quantum dot infrared photodetectors (QDIPs) are receiving attention as next generation infrared photodetectors that offer high-sensitivity and high-temperature operation. The realisation of QDIPs on silicon (Si) substrates offer further great advanta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7acd7ab9129c13cf1bdde5e8e5f0f499
https://doi.org/10.1049/el.2018.7118
https://doi.org/10.1049/el.2018.7118
Autor:
Jinkwan Kwoen, Y. Matushima, Tomohiro Shirai, Katsuyuki Utaka, Y. Arakawa, Yu Hiraishi, H. Ishikawa
Publikováno v:
2019 Compound Semiconductor Week (CSW).
In this paper, we applied the quantum dot intermixing (QDI) technique developed for 1550nm-band InAs QD to 1300nm-band InAs/GaAs QD. Two methods of defect introduction for QDI were employed such as ICP-RIE (Ar+) and ion implantation (B+). As a result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dd329354018706f3c600140ad0b05d0
https://doi.org/10.1109/iciprm.2019.8819072
https://doi.org/10.1109/iciprm.2019.8819072