Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Jinhai Shao"'
Publikováno v:
Mathematical Biosciences and Engineering, Vol 20, Iss 12, Pp 20599-20623 (2023)
The association between adhesion function and papillary thyroid carcinoma (PTC) is increasingly recognized; however, the precise role of adhesion function in the pathogenesis and prognosis of PTC remains unclear. In this study, we employed the robust
Externí odkaz:
https://doaj.org/article/2e9fca8dc6d14a41923899b82cc395ef
Publikováno v:
Micro and Nano Engineering, Vol 13, Iss , Pp 100091- (2021)
High electron mobility transistors (HEMTs) are the basic building block in microwave monolithic integration circuits (MMICs) for broad applications in micrometer (0.3–100 GHz), millimeter (100–300 GHz) and tera [1] hertz (300 GHz–10 THz) wave.
Externí odkaz:
https://doaj.org/article/4a83720ba6964fa6be8c1ccca983dc5e
Autor:
Jianan Deng, Jinhai Shao, Bingrui Lu, Yifang Chen, Alexander Zaslavsky, Sorin Cristoloveanu, Maryline Bawedin, Jing Wan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 557-564 (2018)
A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, the proposed device show
Externí odkaz:
https://doaj.org/article/85100232f7b345758f396799fda9690a
Autor:
Kailiang Huang, Xinlv Duan, Junxiao Feng, Ying Sun, Congyan Lu, Chuanke Chen, Guangfan Jiao, Xinpeng Lin, Jinhai Shao, Shihui Yin, Jiazhen Sheng, Zhaogui Wang, Wenqiang Zhang, Xichen Chuai, Jiebin Niu, Wenwu Wang, Ying Wu, Weiliang Jing, Zhengbo Wang, Jeffrey Xu, Guanhua Yang, Di Geng, Ling Li, Ming Liu
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96d23ec774af3aa3155138baea46e97f
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830271
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830271
Publikováno v:
Microelectronic Engineering. 208:54-59
To maintain fast development of communication toward terrahertz frequencies, InP-based high electron mobility transistors in InGaAs/InAlAs heterojunctions with ultra-short T-shape gates are constantly demanded. Our earlier work has successfully devel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b2eac6fd415ce2a4df2b5fbde1b9963
https://doi.org/10.1016/j.mee.2019.02.004
https://doi.org/10.1016/j.mee.2019.02.004
Autor:
Xue Li, Haimei Gong, Xiumei Shao, Jianan Deng, Tao Li, Rong Wang, Chen Xu, Yifang Chen, Jinhai Shao, Xiaqi Huang, Sichao Zhang
Publikováno v:
Photonics and Nanostructures - Fundamentals and Applications. 33:10-15
There are growing needs for polarimetric detection at infrared wavelengths for broad applications in bioscience, communications, ocean detection, agriculture, etc. Subwavelength metallic gratings are capable of separating the transverse magnetic mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c29e01cdbc19744efca593e80467868
https://doi.org/10.1016/j.photonics.2018.11.002
https://doi.org/10.1016/j.photonics.2018.11.002
Publikováno v:
Microelectronic Engineering. 196:7-12
Free standing gold pillars with sub wavelength pitch have successfully demonstrated the sensing functionality by utilizing the local surface plasmonic resonance in longitudinal mode along the height. So far, the reported pillar height is not beyond 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1836308a774c8fb5d9f4146ac787c492
https://doi.org/10.1016/j.mee.2018.04.007
https://doi.org/10.1016/j.mee.2018.04.007
Publikováno v:
Microelectronic Engineering. 196:1-6
Roughness including surface roughness and line edge roughness (LER) of lithographically generated patterns in resists has been one of the most important issues in semiconductor industry because it limits the further reduction of the minimum feature s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2de787df55f29ee1ba10896ae847288c
https://doi.org/10.1016/j.mee.2018.04.013
https://doi.org/10.1016/j.mee.2018.04.013
Publikováno v:
Microelectronic Engineering. 195:32-35
Nanofabrication of metallic Bragg gratings vertically connected to the AlGaAsSb ridges for distributed-feedback (DFB) lasers based on AlGaAsSb/InGaAsSb was successfully conducted in this work. Owing to the densely distributed 4-μm wide ridges on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dfb0f5f5f0720d411f93ae1b55c2594
https://doi.org/10.1016/j.mee.2018.03.016
https://doi.org/10.1016/j.mee.2018.03.016
Autor:
Hui Shen, Hui-Wen Yuan, Shao-Feng Ding, Albert Chin, Pengfei Wang, Daming Huang, Ming-Fu Li, Jun-Jie Li, Yifang Chen, Jinhai Shao
Publikováno v:
IEEE Electron Device Letters. 38:677-680
For the first time, we report the positive bias temperature instability of the back gated multilayer MoS2 n-MOSFETs with Al2O3 gate dielectric. In the stress phase, the ${I}_{d}$ – ${V}_{g}$ curve shifts to the positive gate bias. In the recovery p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a7ece0cf9f96fee4c0144461da600d
https://doi.org/10.1109/led.2017.2679221
https://doi.org/10.1109/led.2017.2679221