Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Jingzhi Yin"'
Publikováno v:
Second International Conference on Optics and Communication Technology (ICOCT 2022).
Autor:
Yonggang Zou, Hanfei Hu, Hongda Wu, He Zhang, Chongyang Xu, Liang Jin, Jingzhi Yin, Xu Yingtian, Xiaohui Ma
Publikováno v:
ACS Applied Materials & Interfaces. 13:21748-21755
We demonstrate CuCrO2 (CCO) nanoparticle (NP)-polyimide (PI) composite film as a saturable absorber (SA) to regulate the output characteristics of passively Q-switched fiber laser at 1.55 μm. Based on the reverse saturable and saturable absorptions
Publikováno v:
Inorganic Chemistry Frontiers. 6:238-247
In this paper, CuO–CdS composites were synthesized by a facile two-step solvothermal method. The composite materials were characterized by a series of systematical measures, such as X-ray diffraction, Fourier transform infrared spectroscopy, X-ray
Publikováno v:
Superlattices and Microstructures. 125:348-355
In this work, GaN-based vertically conducting near ultraviolet light-emitting diodes (LEDs) were grown on n-SiC substrates by metal-organic chemical vapor deposition. 10 pairs or 20 pairs of Si-doped n-Al0.2Ga0.8N/n-GaN distributed Bragg reflectors (
Autor:
Yingtian, Xu, Hanfei, Hu, Hongda, Wu, Chongyang, Xu, He, Zhang, Liang, Jin, Yonggang, Zou, Xiaohui, Ma, Jingzhi, Yin
Publikováno v:
ACS applied materialsinterfaces. 13(18)
We demonstrate CuCrO
Autor:
Long Yan, Xu Han, Liang Chen, Ye Yu, Degang Zhao, Jingzhi Yin, Gaoqiang Deng, Yuantao Zhang, Pengchong Li
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:7756-7762
Al0.2Ga0.8N/Al0.45Ga0.55N multiple quantum wells (MQWs) were grown on SiC substrates by metal–organic chemical vapor deposition. We studied the influence of well width and barrier width on the structural and optical properties of AlGaN MQWs in deta
Autor:
Zhihong Feng, Bao-Lin Zhang, Yuantao Zhang, Guotong Du, Ying Wang, Shiwei Zhuang, Yuanjie Lv, Xin Dong, Daqiang Hu, Jingzhi Yin
Publikováno v:
Ceramics International. 44:3122-3127
Heteroepitaxial growth of conductive Si-doped β-Ga 2 O 3 films on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) was successfully performed. The effect of Si content on the structural, morphological, electrical and op
Publikováno v:
Optik. 245:167708
A solar-blind ultraviolet photodetector based on p-Si/n-β-Ga2O3:Si heterojunction, using the Si-doped β-Ga2O3 as the n-type layer, was fabricated successfully by metal-organic chemical vapor deposition (MOCVD). The current-voltage and photoresponse
Study on the electroluminescence properties of the p-NiMgO:Li/MgO/n-ZnO nanowires/ITO heterojunction
Publikováno v:
Journal of Luminescence. 187:486-491
We fabricated a p-NiMgO:Li/MgO/n-ZnO NWs/ITO heterojunction device and studied its electroluminescence characteristics. Emission from n-ZnO was observed under forward biases. Significantly the random lasing was achieved. Besides, to investigate the c
Autor:
Zheng-Zheng Ma, Jingzhi Yin, Guotong Du, Bao-Lin Zhang, Xin Dong, Shiwei Zhuang, Daqiang Hu, Yuantao Zhang
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:10997-11001
β-Ga2O3 films were grown on c-plane sapphire substrates at different substrate temperatures by metal-organic chemical vapor deposition. The effects of substrate temperature on transparence, optical band gap and photoluminescence of the films were st