Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jingting Wei"'
Autor:
Kunhong Xiao, Wenrui Lu, Xuemei Zhang, Shenghua Lin, Jingting Wei, Xiangjie Lin, Qingyuan Cai, Yunxi Ye, Yuan Yao, Jiawen Lin, Li Li
Publikováno v:
Frontiers in Medicine, Vol 11 (2024)
PurposeTo develop a predictive model for orthokeratology (Ortho-K) lens decentration 1 month after wear.MethodsThis study included myopic children who were fitted with Ortho-K lenses at Fujian Provincial Hospital between December 2022 and May 2024. C
Externí odkaz:
https://doaj.org/article/e3958c5c0ce74b5ab3d978c6bb55d724
Publikováno v:
Micromachines, Vol 15, Iss 8, p 960 (2024)
This study explores the potential of β-SnSe monolayers as a promising material for ozone (O3) sensing using density functional theory (DFT) combined with the non-equilibrium Green’s function (NEGF) method. The adsorption characteristics of O3 mole
Externí odkaz:
https://doaj.org/article/07773eee27194783bad5dedbf3e2cb85
Publikováno v:
Micromachines, Vol 15, Iss 8, p 978 (2024)
This study explores the potential of MoS2 monolayers as heavy metal sensors for As, Cd, Hg, and Pb using density functional theory (DFT) and Non-Equilibrium Green’s Function (NEGF) simulations. Our findings reveal that As and Pb adsorption signific
Externí odkaz:
https://doaj.org/article/1f5ae7f0c3f64d1f95cab85d945c7b19
Publikováno v:
Environmental Science and Pollution Research. 28:61568-61580
With rapid development of energy, information, and communication technology, e-waste problem has become one of the global issues to be settled urgently. The main features on publication years, journals, countries and institutions, authors, keywords,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a5984bd4dfc6ca31604bee172c195ee
https://doi.org/10.1007/s11356-021-15147-z
https://doi.org/10.1007/s11356-021-15147-z
Objectives: With rapid development of energy, information and communication technology, e-waste problem has become one of the global issues to be settled urgently. The main features on publication years, journals, countries and institutions, authors,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b86e0b67e750c09bf715f6da7f62c472
https://doi.org/10.21203/rs.3.rs-164625/v1
https://doi.org/10.21203/rs.3.rs-164625/v1
Publikováno v:
Chinese Journal of Electronics. 25:672-677
The optimal design of GaN-based Lightemitting diode (LED) is important for its reliability. In this work, a new three-Dimensional (3D) circuit model with a resistor network is developed to study the current distribution in the active layer of vertica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ddad6ce83778185851d704c1247a85a
https://doi.org/10.1049/cje.2016.07.014
https://doi.org/10.1049/cje.2016.07.014
Publikováno v:
2013 10th China International Forum on Solid State Lighting (ChinaSSL).
The performance of white LED is highly dependent on the current effect and thermal effect. In this work, a measurement equipment is designed and set up to study the relationships among light output, current and junction temperature by controlling the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfba9eb14185dc314f5bc6a5c5d6a6e7
https://doi.org/10.1109/sslchina.2013.7177340
https://doi.org/10.1109/sslchina.2013.7177340
Autor:
Tufu Chen, Takashi Egawa, Gang Wang, Zhicong Huang, Bingfeng Fan, Jingting Wei, Weimin Yang, Wentao Rao, Baijun Zhang, Yang Liu
Publikováno v:
Japanese Journal of Applied Physics. 49:072104
A novel vertical GaN-based light-emitting diode (LED) structure on a Si(111) substrate with through-holes was reported in this letter. The through-holes were formed by dry etching from the n-GaN layer to the Si substrate. Metals connecting the n-GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::550b0b32fdedca7d47e0345db5c82d80
https://doi.org/10.1143/jjap.49.072104
https://doi.org/10.1143/jjap.49.072104
Publikováno v:
2013 10th China International Forum on Solid State Lighting (ChinaSSL); 2013, p166-169, 4p