Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jingtao Ge"'
Autor:
Sheng Hu, Tianqi Zheng, Chengzhen Bian, Xiongwei Yang, Xinda Sun, Zonghui Zhu, Yumeng Gou, Yuanxiao Meng, Jie Zhang, Jingtao Ge, Yichen Li, Kaihui Wang
Publikováno v:
Sensors, Vol 24, Iss 23, p 7872 (2024)
In this work, we implemented a short-reach real-time optical communication system using MLP for pre-distortion. Lookup table (LUT) algorithms are commonly employed for pre-distortion in intensity modulation and direct detection (IM/DD) systems. Howev
Externí odkaz:
https://doaj.org/article/bd419b94645841ce82eddc2fa1085798
Autor:
Jingwen Lin, Sicong Xu, Qihang Wang, Jie Zhang, Jingtao Ge, Siqi Wang, Zhihang Ou, Yuan Ma, Wen Zhou, Jianjun Yu
Publikováno v:
Photonics, Vol 11, Iss 11, p 1009 (2024)
In this paper, we explore the enhancement of a 4.6 km dual-polarization 2 × 2 MIMO D-band photonic-assisted terahertz communication system using iterative pruning-based deep neural network (DNN) nonlinear equalization techniques. The system employs
Externí odkaz:
https://doaj.org/article/ffe16cfcfab54aecb846c8cec81f44ca
Publikováno v:
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
A step trench and field limiting ring(FLR) termination structure with n+ short anode region is analyzed by using 2-dimensional numerical simulation in this paper. Take for 4.5kV Dual-GCT as an example, the improved structures with the whole and parti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4f22e54a760ff99620145a5419dfec
https://doi.org/10.1109/edssc.2019.8754389
https://doi.org/10.1109/edssc.2019.8754389
Publikováno v:
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
A novel trench gate MOS turn-off GCT (TMOS-GCT) is proposed in this paper, in which a trench pMOS is induced between the conventional gate and the main GCT cell. The turn-on of T-MOS-GCT is controlled by current signals applied to the conventional ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::836e00823ac87303707be949ba399a9a
https://doi.org/10.1109/edssc.2019.8754319
https://doi.org/10.1109/edssc.2019.8754319
Publikováno v:
Journal of Materials Research and Technology, Vol 26, Iss , Pp 1962-1983 (2023)
In order to obtain the influence law of scanning strategy on the quality, accuracy, microstructure and performance of parts by Laser Additive Manufacturing (LAM), three scanning strategies, namely long-edge, short-edge and cross-layer, were used for
Externí odkaz:
https://doaj.org/article/3928c0a58eee48878028d46b86979c9c