Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jingsheng Jin"'
Autor:
Shuai Yuan, Siqi Ding, Bin Ai, Daming Chen, Jingsheng Jin, Jiaxing Ye, Depeng Qiu, Xiaopu Sun, Xueqin Liang
Publikováno v:
International Journal of Photoenergy, Vol 2022 (2022)
In order to investigate the light-induced-degradation (LID) and regeneration of industrial PERC solar cells made from different positions of silicon wafers in a silicon ingot, five groups of silicon wafers were cut from a commercial solar-grade boron
Externí odkaz:
https://doaj.org/article/f3f98dc44dbe4e418e0ed96f08dd4f1b
Publikováno v:
International Journal of Photoenergy, Vol 2019 (2019)
In this paper, 156 mm×156 mm boron-doped Czochralski silicon (Cz-Si) wafers were fabricated into PERC solar cells by using the industrial standard process; then, the as-prepared PERC solar cells were treated by the regeneration process using electri
Externí odkaz:
https://doaj.org/article/e08485d923d6402f8236e7bccb95b8ea
Autor:
Xinyu Zhang, Robert Dumbrell, Wenqi Li, Menglei Xu, Di Yan, Jingsheng Jin, Zhao Wang, Peiting Zheng, Changming Liu, Jie Yang
Publikováno v:
Progress in Photovoltaics: Research and Applications. 31:369-379
Publikováno v:
IEEE Journal of Photovoltaics. 7:1264-1269
In this paper, we demonstrate novel texturing technologies developed for diamond wire sawn multicrystalline silicon wafers. SEM analysis shows that inverted pyramid like texture is produced on the wafer surface by a combination of reactive ion etchin
Publikováno v:
International Journal of Photoenergy, Vol 2019 (2019)
In this paper, 156 mm×156 mm boron-doped Czochralski silicon (Cz-Si) wafers were fabricated into PERC solar cells by using the industrial standard process; then, the as-prepared PERC solar cells were treated by the regeneration process using electri
Autor:
Hang Cheong Sio, Wenhao Chen, Daniel Macdonald, Di Kang, Jingsheng Jin, Di Yan, Xinyu Zhang, Jie Yang
Publikováno v:
Solar Energy Materials and Solar Cells. 215:110691
We investigate the stability of the effective lifetime τeff and the recombination current density parameter J0 in n-type silicon samples with symmetric phosphorus doped poly-Si/SiOx structures, and identify factors that contribute to the passivation
Autor:
Kaining Ding, Lanxiang Meng, Hui Shen, Jingsheng Jin, Bin Ai, Weiyuan Duan, Zongcun Liang, Kaifu Qiu, Shenghao Li, Wenjie Lin, Zhirong Yao, Lun Cai
Publikováno v:
Physica status solidi / Rapid research letters Rapid research letters 14(6), 2000103 (2020). doi:10.1002/pssr.202000103
One of the challenges in fabricating high‐performance n‐type crystalline silicon (n‐type c‐Si) solar cells is the high‐quality n‐type c‐Si/metal contact. Schottky barriers are commonly found on the n‐type c‐Si/metal contact, which s
Publikováno v:
Progress in Photovoltaics: Research and Applications. 18:54-60
Shunts in crystalline silicon solar cells can be physically removed and replaced with good cells to eliminate their influences, which is proved by the experiments in this paper. By infrared imaging and laser cutting, the shunted regions near the edge