Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Jingru Dai"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:536-543
This study investigates the power cycling reliability of nanosilver sintered joints formed by a time-reduced sintering process, designed for use on a die bonder. A range of sintering parameters, reflecting different levels of manufacturability, were
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:2271-2284
As core components of power converters, the insulated gate bipolar transistor (IGBT) module is required to have long-term reliability in increasingly more applications. To assess and improve the reliability, power cycling (PC) tests are conducted to
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:706-715
This study quantifies the correlations between crack evolution and electrical performance degradation of the Al metallization in insulated gate bipolar transistor (IGBT) modules. The resistance of the Al metallization under different power cycling ti
Autor:
Pearl Agyakwa, Jiefang Li, Bassem Mouawad, Christopher Mark Johnson, Li Yang, Martin Corfield, Jingru Dai
Publikováno v:
Journal of Microscopy
Summary A time‐lapse study of thermomechanical fatigue damage has been undertaken using three‐dimensional X‐ray computer tomography. Morphologies were extracted from tomography data and integrated with data from microscopy modalities at differe
Autor:
Jingru Dai, John O Brien, Ke Li, Krzysztof Paciura, Martin Corfield, C. Mark Johnson, Li Yang, Anne Harris
Publikováno v:
IEEE Transactions on Power Electronics. 33:10594-10601
Integration of decoupling capacitors into silicon carbide (SiC) metal oxide semiconductor field effect transistor ( mosfet ) modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In t
Autor:
Christina DiMarino, Liliana de Lillo, Jingru Dai, C. Mark Johnson, Jordi Espina, Bassem Mouawad, Behzad Ahmadi, Lee Empringham
Publikováno v:
International Symposium on Microelectronics. 2018:000069-000074
Wide band-gap (WBG) semiconductors offer many potential benefits to designers of power electronic systems. Lower switching losses allow operation at higher switching frequencies, which in principle allows a reduction in passive component values in ma
Autor:
Jingru Dai1 Jingru.Dai@exmail.nottingham.ac.uk, Jianfeng Li1, Agyakwa, Pearl1, Johnson, Christopher Mark1
Publikováno v:
Journal of Microelectronic & Electronic Packaging. Oct2017, Vol. 14 Issue 4, p140-149. 10p.
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 14:140-149
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes to a few hours have been widely reported. This paper presents our work on time-efficient sintering, using nanosilver dry film and an
Publikováno v:
Microelectronics Reliability. 111:113740
This study investigates a time-reduced sintering process for die attachment, prepared, within a processing time of several seconds using dry nanosilver film. The effects of three main sintering parameters, sintering temperature (220 to 300 °C), sint
Publikováno v:
2018 19th International Conference on Electronic Packaging Technology (ICEPT).
This study presents the development and performance of a half bride insulated-gate bipolar transistor planar power module integrated with a turbulent water cooler for double side direct substrate cooling. A holistic approach which simultaneously over