Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Jingjie Lin"'
Publikováno v:
IEEE Access, Vol 8, Pp 48991-48999 (2020)
A novel lateral power fin metal-oxide-semiconductor field-effect transistor (MOSFET) made on a silicon-on-insulator substrate is proposed. The fin silicon drift region of the proposed device is surrounded by a high-k (HK) passivation. The HK passivat
Externí odkaz:
https://doaj.org/article/b0d2dec4bb884bbebb7cffc18ee2bbe5
Publikováno v:
Journal of Geographical Sciences. 32:44-64
Publikováno v:
The Science of the total environment. 861
Storms, in subtropical regions such as S.E. China, cause major changes in the physical and biogeochemical fluxes of anthropogenic N species through the river-estuary continuum to the coast. Two weeks continuous observations at a sampling station (Sta
Publikováno v:
Journal of Geophysical Research: Biogeosciences. 127
Publikováno v:
Journal of environmental management. 326
Land use change and excessive nitrogen (N) loading threaten the health of receiving water bodies worldwide. However, the role of hydrological connectivity in linking watershed land use, N biogeochemistry and river water quality remain unclear. In thi
Autor:
Tuan Zhou, Hui Guo, Simin Wei, Yinghui Wang, Rui Su, Jinhang Hu, Nan Wang, Rongrong Xu, Zhi-Shu Tang, Jingjie Lin
Publikováno v:
New Journal of Chemistry. 44:9304-9312
Green synthesis of silver nanoparticles (AgNPs) has been extensively studied by using a variety of plant extracts for applications in biomedical sciences and engineering. However, there are no reports on the synthesis of AgNPs by utilizing the berry
Publikováno v:
IEEE Transactions on Electron Devices. 66:3049-3054
An idea of applying a film of high-k (HK) material to the trench lateral double-diffused MOSFET (LDMOS) is proposed and studied by simulation. Through introducing an HK film around the SiO2 trench, the flow of electric flux is guided, and the distrib
Publikováno v:
Superlattices and Microstructures. 130:168-174
In this study, SrTiO3 (STO) film without cracks is directly deposited on the surface of silicon. Some key characteristics of the film are measured. By taking the measurement results into the simulation, it is verified that the STO film is able to imp
Autor:
Michael D. Krom, Dan Yu, Peng Cheng, Fengling Yu, Jingjie Lin, Nengwang Chen, Weidong Guo, Xinjuan Gao, Huasheng Hong
Publikováno v:
Biogeochemistry. 142:443-466
Higher nitrogen fluxes through estuaries increase the risk of harmful algal blooms, may expand eutrophication and can cause hypoxia within estuaries and the adjacent coastal areas. However, the key factors controlling dissolved inorganic nitrogen (DI
Publikováno v:
Journal of Hydrology. 606:127438